Control of Crystallinity in Nanocrystalline Silicon Prepared by High Working Pressure Plasma-Enhanced Chemical Vapor Deposition
Joint Authors
Choi, Si-Young
Park, Sung-Gyu
Jeong, Yongsoo
Nam, Kee-Seok
Kwon, Jung-Dae
Kim, Dong-Ho
Source
Advances in Materials Science and Engineering
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-08-16
Country of Publication
Egypt
No. of Pages
6
Main Subjects
Engineering Sciences and Information Technology
Abstract EN
The crystalline volume of nanocrystalline silicon (Si) films could be successfully controlled simply by changing the substrate scan speed at the high working pressure of 300 Torr.
The Si crystalline volume fraction was increased from 30% to 57% by increasing the scan speed from 8 to 30 mm/s.
When the Si film was prepared at a low scan speed (8 mm/s), Si crystals of size 5 nm grew homogeneously through the whole film.
The higher scan speed was found to accelerate crystallization, and crystals of size up to 25 nm were deposited in the Si film deposited when the scan speed was 30 mm/s.
American Psychological Association (APA)
Kwon, Jung-Dae& Nam, Kee-Seok& Jeong, Yongsoo& Kim, Dong-Ho& Park, Sung-Gyu& Choi, Si-Young. 2012. Control of Crystallinity in Nanocrystalline Silicon Prepared by High Working Pressure Plasma-Enhanced Chemical Vapor Deposition. Advances in Materials Science and Engineering،Vol. 2012, no. 2012, pp.1-6.
https://search.emarefa.net/detail/BIM-454990
Modern Language Association (MLA)
Kwon, Jung-Dae…[et al.]. Control of Crystallinity in Nanocrystalline Silicon Prepared by High Working Pressure Plasma-Enhanced Chemical Vapor Deposition. Advances in Materials Science and Engineering No. 2012 (2012), pp.1-6.
https://search.emarefa.net/detail/BIM-454990
American Medical Association (AMA)
Kwon, Jung-Dae& Nam, Kee-Seok& Jeong, Yongsoo& Kim, Dong-Ho& Park, Sung-Gyu& Choi, Si-Young. Control of Crystallinity in Nanocrystalline Silicon Prepared by High Working Pressure Plasma-Enhanced Chemical Vapor Deposition. Advances in Materials Science and Engineering. 2012. Vol. 2012, no. 2012, pp.1-6.
https://search.emarefa.net/detail/BIM-454990
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-454990