9T Full Adder Design in Subthreshold Region

Joint Authors

Sharma, Tripti
Singh, Shiwani
Sharma, K. G.
Singh, B. P.

Source

VLSI Design

Issue

Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-5, 5 p.

Publisher

Hindawi Publishing Corporation

Publication Date

2012-03-11

Country of Publication

Egypt

No. of Pages

5

Main Subjects

Engineering Sciences and Information Technology

Abstract EN

This paper presents prelayout simulations of two existing 9T and new proposed 9T full adder circuit in subthreshold region to employ in ultralow-power applications.

The proposed circuit consists of a new logic which is used to implement Sum module.

The proposed design remarkably reduces power-delay product (PDP) and improves temperature sustainability when compared with existing 9T adders.

Therefore, in a nut shell proposed adder cell outperforms the existing adders in subthreshold region and proves to be a viable option for ultralow-power and energy-efficient applications.

All simulations are performed on 45 nm standard model on Tanner EDA tool version 13.0.

American Psychological Association (APA)

Singh, Shiwani& Sharma, Tripti& Sharma, K. G.& Singh, B. P.. 2012. 9T Full Adder Design in Subthreshold Region. VLSI Design،Vol. 2012, no. 2012, pp.1-5.
https://search.emarefa.net/detail/BIM-457185

Modern Language Association (MLA)

Singh, Shiwani…[et al.]. 9T Full Adder Design in Subthreshold Region. VLSI Design No. 2012 (2012), pp.1-5.
https://search.emarefa.net/detail/BIM-457185

American Medical Association (AMA)

Singh, Shiwani& Sharma, Tripti& Sharma, K. G.& Singh, B. P.. 9T Full Adder Design in Subthreshold Region. VLSI Design. 2012. Vol. 2012, no. 2012, pp.1-5.
https://search.emarefa.net/detail/BIM-457185

Data Type

Journal Articles

Language

English

Notes

Includes bibliographical references

Record ID

BIM-457185