9T Full Adder Design in Subthreshold Region
Joint Authors
Sharma, Tripti
Singh, Shiwani
Sharma, K. G.
Singh, B. P.
Source
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-5, 5 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-03-11
Country of Publication
Egypt
No. of Pages
5
Main Subjects
Engineering Sciences and Information Technology
Abstract EN
This paper presents prelayout simulations of two existing 9T and new proposed 9T full adder circuit in subthreshold region to employ in ultralow-power applications.
The proposed circuit consists of a new logic which is used to implement Sum module.
The proposed design remarkably reduces power-delay product (PDP) and improves temperature sustainability when compared with existing 9T adders.
Therefore, in a nut shell proposed adder cell outperforms the existing adders in subthreshold region and proves to be a viable option for ultralow-power and energy-efficient applications.
All simulations are performed on 45 nm standard model on Tanner EDA tool version 13.0.
American Psychological Association (APA)
Singh, Shiwani& Sharma, Tripti& Sharma, K. G.& Singh, B. P.. 2012. 9T Full Adder Design in Subthreshold Region. VLSI Design،Vol. 2012, no. 2012, pp.1-5.
https://search.emarefa.net/detail/BIM-457185
Modern Language Association (MLA)
Singh, Shiwani…[et al.]. 9T Full Adder Design in Subthreshold Region. VLSI Design No. 2012 (2012), pp.1-5.
https://search.emarefa.net/detail/BIM-457185
American Medical Association (AMA)
Singh, Shiwani& Sharma, Tripti& Sharma, K. G.& Singh, B. P.. 9T Full Adder Design in Subthreshold Region. VLSI Design. 2012. Vol. 2012, no. 2012, pp.1-5.
https://search.emarefa.net/detail/BIM-457185
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-457185