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Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities
Joint Authors
Alves, Andrew D.
Thompson, Samuel C.
van Donkelaar, Jessica A.
McCallum, Jeffrey C.
Johnson, Brett C.
Jamieson, David N.
Yang, Changyi
Hopf, Toby
Source
Advances in Materials Science and Engineering
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-10, 10 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2011-11-28
Country of Publication
Egypt
No. of Pages
10
Main Subjects
Engineering Sciences and Information Technology
Abstract EN
Interest in single-ion implantation is driven in part by research into development of solid-state devices that exhibit quantum behaviour in their electronic or optical characteristics.
Here, we provide an overview of international research work on single ion implantation and single ion detection for development of electronic devices for quantum computing.
The scope of international research into single ion implantation is presented in the context of our own research in the Centre for Quantum Computation and Communication Technology in Australia.
Various single ion detection schemes are presented, and limitations on dopant placement accuracy due to ion straggling are discussed together with pathways for scale-up to multiple quantum devices on the one chip.
Possible future directions for ion implantation in quantum computing and communications are also discussed.
American Psychological Association (APA)
McCallum, Jeffrey C.& Jamieson, David N.& Yang, Changyi& Alves, Andrew D.& Johnson, Brett C.& Hopf, Toby…[et al.]. 2011. Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities. Advances in Materials Science and Engineering،Vol. 2012, no. 2012, pp.1-10.
https://search.emarefa.net/detail/BIM-459302
Modern Language Association (MLA)
McCallum, Jeffrey C.…[et al.]. Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities. Advances in Materials Science and Engineering No. 2012 (2012), pp.1-10.
https://search.emarefa.net/detail/BIM-459302
American Medical Association (AMA)
McCallum, Jeffrey C.& Jamieson, David N.& Yang, Changyi& Alves, Andrew D.& Johnson, Brett C.& Hopf, Toby…[et al.]. Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities. Advances in Materials Science and Engineering. 2011. Vol. 2012, no. 2012, pp.1-10.
https://search.emarefa.net/detail/BIM-459302
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-459302