Studying the Attribution of LiF in OLED by the C-V Characteristics
Joint Authors
Zhang, Yong
Zhang, Chun-lin
Wang, Fang-cong
Liu, Su
Li, Hai-xia
Source
International Journal of Photoenergy
Issue
Vol. 2010, Issue 2010 (31 Dec. 2010), pp.1-4, 4 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2010-12-02
Country of Publication
Egypt
No. of Pages
4
Main Subjects
Abstract EN
The organic light-emitting device (OLED) with simple structures of indium tin oxide (ITO)/tris(8-quinolinolato) aluminum (Alq3)/LiF/Al and ITO/Alq3/Al was fabricated to analyze the contribution of LiF in OLED.
We used the C-V characteristics to investigate the contribution of LiF in OLED and found that the capacitance of the above-mentioned structures was 12.5 nF and 77.5 nF, respectively.
It is shown that the LiF layer affects the property of OLED resulting in the change of the capacitance of the device.
American Psychological Association (APA)
Zhang, Chun-lin& Wang, Fang-cong& Zhang, Yong& Li, Hai-xia& Liu, Su. 2010. Studying the Attribution of LiF in OLED by the C-V Characteristics. International Journal of Photoenergy،Vol. 2010, no. 2010, pp.1-4.
https://search.emarefa.net/detail/BIM-460929
Modern Language Association (MLA)
Zhang, Chun-lin…[et al.]. Studying the Attribution of LiF in OLED by the C-V Characteristics. International Journal of Photoenergy No. 2010 (2010), pp.1-4.
https://search.emarefa.net/detail/BIM-460929
American Medical Association (AMA)
Zhang, Chun-lin& Wang, Fang-cong& Zhang, Yong& Li, Hai-xia& Liu, Su. Studying the Attribution of LiF in OLED by the C-V Characteristics. International Journal of Photoenergy. 2010. Vol. 2010, no. 2010, pp.1-4.
https://search.emarefa.net/detail/BIM-460929
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-460929
