Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides : An Internal Photoemission Study
Author
Source
Advances in Condensed Matter Physics
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-30, 30 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-02-13
Country of Publication
Egypt
No. of Pages
30
Main Subjects
Abstract EN
Evolution of the electron energy band alignment at interfaces between different semiconductors and wide-gap oxide insulators is examined using the internal photoemission spectroscopy, which is based on observations of optically-induced electron (or hole) transitions across the semiconductor/insulator barrier.
Interfaces of various semiconductors ranging from the conventional silicon to the high-mobility Ge-based (Ge, Si1-xGex, Ge1-xSnx) and AIIIBV group (GaAs, InxGa1-xAs, InAs, GaP, InP, GaSb, InSb) materials were studied revealing several general trends in the evolution of band offsets.
It is found that in the oxides of metals with cation radii larger than ≈0.7 Å, the oxide valence band top remains nearly at the same energy (±0.2 eV) irrespective of the cation sort.
Using this result, it becomes possible to predict the interface band alignment between oxides and semiconductors as well as between dissimilar insulating oxides on the basis of the oxide bandgap width which are also affected by crystallization.
By contrast, oxides of light elements, for example, Be, Mg, Al, Si, and Sc exhibit significant shifts of the valence band top.
General trends in band lineup variations caused by a change in the composition of semiconductor photoemission material are also revealed.
American Psychological Association (APA)
Afanas'ev, Valeri V.. 2014. Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides : An Internal Photoemission Study. Advances in Condensed Matter Physics،Vol. 2014, no. 2014, pp.1-30.
https://search.emarefa.net/detail/BIM-461585
Modern Language Association (MLA)
Afanas'ev, Valeri V.. Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides : An Internal Photoemission Study. Advances in Condensed Matter Physics No. 2014 (2014), pp.1-30.
https://search.emarefa.net/detail/BIM-461585
American Medical Association (AMA)
Afanas'ev, Valeri V.. Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides : An Internal Photoemission Study. Advances in Condensed Matter Physics. 2014. Vol. 2014, no. 2014, pp.1-30.
https://search.emarefa.net/detail/BIM-461585
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-461585