Systematic Investigation of Gettering Effects on 4th Row Element Impurities in Si by Dopant Atoms
Joint Authors
Kamimura, Ken
Sueoka, Koji
Shiba, Seiji
Source
Advances in Materials Science and Engineering
Issue
Vol. 2009, Issue 2009 (31 Dec. 2009), pp.1-3, 3 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2010-01-27
Country of Publication
Egypt
No. of Pages
3
Main Subjects
Engineering Sciences and Information Technology
Abstract EN
The gettering of 4th row element impurities (K, Ca, 3d transition metals, and Zn) in Si crystals by dopant atoms was systematically investigated by first-principles calculation through evaluation of the diffusion barrier and the binding energy.
The dopant atoms considered include p-type dopants (B), n-type dopants (P, As, Sb), or light elements (C, O).
It was found that (1) the diffusion barrier of impurity atoms decreases with an increase in their atomic number up to Ni, (2) B atom becomes an efficient gettering center for metals except for Ni, (3) most of the metals except for Fe and Co cannot be gettered by n-type dopants, and (4) C and O atoms alone do not become efficient gettering centers for the metals used in actual LSI processes.
The vacancy Vc and n-type dopant complexes (PVc, AsVc, SbVc) can be efficient gettering centers for Cu in n/n+ epitaxial wafers.
American Psychological Association (APA)
Sueoka, Koji& Kamimura, Ken& Shiba, Seiji. 2010. Systematic Investigation of Gettering Effects on 4th Row Element Impurities in Si by Dopant Atoms. Advances in Materials Science and Engineering،Vol. 2009, no. 2009, pp.1-3.
https://search.emarefa.net/detail/BIM-462349
Modern Language Association (MLA)
Sueoka, Koji…[et al.]. Systematic Investigation of Gettering Effects on 4th Row Element Impurities in Si by Dopant Atoms. Advances in Materials Science and Engineering No. 2009 (2009), pp.1-3.
https://search.emarefa.net/detail/BIM-462349
American Medical Association (AMA)
Sueoka, Koji& Kamimura, Ken& Shiba, Seiji. Systematic Investigation of Gettering Effects on 4th Row Element Impurities in Si by Dopant Atoms. Advances in Materials Science and Engineering. 2010. Vol. 2009, no. 2009, pp.1-3.
https://search.emarefa.net/detail/BIM-462349
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-462349