Effects of Phosphorus Diffusion on Gettering of Metal Impurities in UMG Silicon Wafers
Joint Authors
Choi, Kyoon
Yoon, Sung Yean
Kim, Jeong
Source
International Journal of Photoenergy
Issue
Vol. 2013, Issue 2013 (31 Dec. 2013), pp.1-7, 7 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2013-11-26
Country of Publication
Egypt
No. of Pages
7
Main Subjects
Abstract EN
Fe distributions were simulated by using impurity-to-efficiency simulator for the analysis of phosphorus diffusion gettering and confirmed the dependencies of the electron lifetime on the various gettering conditions.
It was observed that iron atoms in the Si wafer could be more efficiently gettered if the temperatures were provided to the wafer in two different steps.
That two-step gettering process was applied to an upgraded-metallurgical grade (UMG) Si wafer, and the electron lifetimes of the UMG-Si wafer were 3 μsec by applying the second temperature profile at 600°C for 420 min.
It was also confirmed that the efficiency of the UMG-Si solar cell increased 0.53% due to two-step gettering process.
American Psychological Association (APA)
Yoon, Sung Yean& Kim, Jeong& Choi, Kyoon. 2013. Effects of Phosphorus Diffusion on Gettering of Metal Impurities in UMG Silicon Wafers. International Journal of Photoenergy،Vol. 2013, no. 2013, pp.1-7.
https://search.emarefa.net/detail/BIM-462672
Modern Language Association (MLA)
Yoon, Sung Yean…[et al.]. Effects of Phosphorus Diffusion on Gettering of Metal Impurities in UMG Silicon Wafers. International Journal of Photoenergy No. 2013 (2013), pp.1-7.
https://search.emarefa.net/detail/BIM-462672
American Medical Association (AMA)
Yoon, Sung Yean& Kim, Jeong& Choi, Kyoon. Effects of Phosphorus Diffusion on Gettering of Metal Impurities in UMG Silicon Wafers. International Journal of Photoenergy. 2013. Vol. 2013, no. 2013, pp.1-7.
https://search.emarefa.net/detail/BIM-462672
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-462672