Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing
Joint Authors
Chen, Lih-Juann
Xiu, Faxian
Tang, Jianshi
Zhou, Yi
Wang, Chiu-Yen
Wang, Kang L.
Source
Advances in Materials Science and Engineering
Issue
Vol. 2011, Issue 2011 (31 Dec. 2011), pp.1-16, 16 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2011-10-04
Country of Publication
Egypt
No. of Pages
16
Main Subjects
Engineering Sciences and Information Technology
Abstract EN
We reviewed the formation of Ge nanowire heterostructure and its field-effect characteristics by a controlled reaction between a single-crystalline Ge nanowire and Ni contact pads using a facile rapid thermal annealing process.
Scanning electron microscopy and transmission electron microscopy demonstrated a wide temperature range of 400~500°C to convert the Ge nanowire to a single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure with atomically sharp interfaces.
More importantly, we studied the effect of oxide confinement during the formation of nickel germanides in a Ge nanowire.
In contrast to the formation of Ni2Ge/Ge/Ni2Ge nanowire heterostructures, a segment of high-quality epitaxial NiGe was formed between Ni2Ge with the confinement of Al2O3 during annealing.
A twisted epitaxial growth mode was observed in both two Ge nanowire heterostructures to accommodate the large lattice mismatch in the NixGe/Ge interface.
Moreover, we have demonstrated field-effect transistors using the nickel germanide regions as source/drain contacts to the Ge nanowire channel.
Our Ge nanowire transistors have shown a high-performance p-type behavior with a high on/off ratio of 105 and a field-effect hole mobility of 210 cm2/Vs, which showed a significant improvement compared with that from unreacted Ge nanowire transistors.
American Psychological Association (APA)
Tang, Jianshi& Wang, Chiu-Yen& Xiu, Faxian& Zhou, Yi& Chen, Lih-Juann& Wang, Kang L.. 2011. Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing. Advances in Materials Science and Engineering،Vol. 2011, no. 2011, pp.1-16.
https://search.emarefa.net/detail/BIM-462917
Modern Language Association (MLA)
Tang, Jianshi…[et al.]. Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing. Advances in Materials Science and Engineering No. 2011 (2011), pp.1-16.
https://search.emarefa.net/detail/BIM-462917
American Medical Association (AMA)
Tang, Jianshi& Wang, Chiu-Yen& Xiu, Faxian& Zhou, Yi& Chen, Lih-Juann& Wang, Kang L.. Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing. Advances in Materials Science and Engineering. 2011. Vol. 2011, no. 2011, pp.1-16.
https://search.emarefa.net/detail/BIM-462917
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-462917