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Numerical Simulation of the Effect of Heater Position on the Oxygen Concentration in the CZ Silicon Crystal Growth Process
Joint Authors
Chen, Chi-Yung
Chen, Hsueh-I
Chen, Jyh-Chen
Lu, Chung-Wei
Teng, Ying-Yang
Huang, Cheng-Chuan
Lan, Wen-Chieh
Wun, Wan-Ting
Source
International Journal of Photoenergy
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-03-15
Country of Publication
Egypt
No. of Pages
6
Main Subjects
Abstract EN
We perform numerical simulations to analyze the effect of the position of the heater on the thermal and flow fields and the oxygen concentration distribution during the industrial Cz silicon crystal growth process.
The amount of oxygen released from the silica crucible to the silicon melt during the growth process can be lowered by adjusting the heater position to decrease the temperature on the crucible wall.
During growth of the crystal body, there is a significant decrease in the gradient of the oxygen concentration along the melt-crystal interface due to the stronger Taylor-Proudman vortex, which is generated by the crucible and crystal rotation.
There is a significant reduction in the average oxygen concentration at the melt-crystal interface for longer crystal lengths because of the lower wall temperature, smaller contact surface between the crucible wall and the melt and the stronger Taylor-Proudman vortex.
American Psychological Association (APA)
Teng, Ying-Yang& Chen, Jyh-Chen& Lu, Chung-Wei& Huang, Cheng-Chuan& Wun, Wan-Ting& Chen, Hsueh-I…[et al.]. 2012. Numerical Simulation of the Effect of Heater Position on the Oxygen Concentration in the CZ Silicon Crystal Growth Process. International Journal of Photoenergy،Vol. 2012, no. 2012, pp.1-6.
https://search.emarefa.net/detail/BIM-468748
Modern Language Association (MLA)
Teng, Ying-Yang…[et al.]. Numerical Simulation of the Effect of Heater Position on the Oxygen Concentration in the CZ Silicon Crystal Growth Process. International Journal of Photoenergy No. 2012 (2012), pp.1-6.
https://search.emarefa.net/detail/BIM-468748
American Medical Association (AMA)
Teng, Ying-Yang& Chen, Jyh-Chen& Lu, Chung-Wei& Huang, Cheng-Chuan& Wun, Wan-Ting& Chen, Hsueh-I…[et al.]. Numerical Simulation of the Effect of Heater Position on the Oxygen Concentration in the CZ Silicon Crystal Growth Process. International Journal of Photoenergy. 2012. Vol. 2012, no. 2012, pp.1-6.
https://search.emarefa.net/detail/BIM-468748
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-468748