Theoretical Study of a Thermophysical Property of Molten Semiconductors
Joint Authors
Source
Issue
Vol. 2011, Issue 2011 (31 Dec. 2011), pp.1-5, 5 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2011-04-14
Country of Publication
Egypt
No. of Pages
5
Main Subjects
Abstract EN
This paper deals with theoretical approach to surface tension of molten silicon and germanium, and contributes to this field, which is very important.
A theoretical calculation for determining the surface tension of high-temperature semiconductor melts, such as molten silicon and germanium, in the temperature range 1687–1825 K and 1211–1400 K, respectively, is described.
The calculated temperature-dependence surface tension data for both Si and Ge are expressed as γ=876-0.32 (T-Tm) and γ=571-0.074 (T-Tm) (mJ m−2), respectively.
These values are in consistence with the reported experimental data (720–875 for Si and 560–632 mJ m−2 for Ge).
The calculated surface tension for both elements decreases linearly with temperature.
American Psychological Association (APA)
Aqra, Fathi& Ayyad, Ahmed. 2011. Theoretical Study of a Thermophysical Property of Molten Semiconductors. Journal of Metallurgy،Vol. 2011, no. 2011, pp.1-5.
https://search.emarefa.net/detail/BIM-472165
Modern Language Association (MLA)
Aqra, Fathi& Ayyad, Ahmed. Theoretical Study of a Thermophysical Property of Molten Semiconductors. Journal of Metallurgy No. 2011 (2011), pp.1-5.
https://search.emarefa.net/detail/BIM-472165
American Medical Association (AMA)
Aqra, Fathi& Ayyad, Ahmed. Theoretical Study of a Thermophysical Property of Molten Semiconductors. Journal of Metallurgy. 2011. Vol. 2011, no. 2011, pp.1-5.
https://search.emarefa.net/detail/BIM-472165
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-472165