60Co-Gamma Ray Induced Total Dose Effects on P-Channel MOSFETs
Joint Authors
Balakrishna, Kagalagodu Manjunathiah
Jayanna, Halepoojar Siddalingappa
Singh, Vikram
Nagaraj, Shashank
Damle, Ramakrishna
Source
Indian Journal of Materials Science
Issue
Vol. 2013, Issue 2013 (31 Dec. 2013), pp.1-5, 5 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2013-11-03
Country of Publication
Egypt
No. of Pages
5
Main Subjects
Abstract EN
Total Dose Effect (TDE) on solid state devices is of serious concern as it changes the electrical properties leading to degradation of the devices and failure of the systems associated with them.
Ionization caused due to TDE in commercial P-channel Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) has been studied, where the failure mechanism is found to be mainly a result of the changes in the oxide properties and the surface effects at the channel beneath the gate oxide.
The threshold voltage of the MOSFETs was found to shift from −0.69 V to −2.41 V for a total gamma dose of 1 Mrad.
The net negative threshold shifts in the irradiated devices reveal the major contribution of oxide trapped charges to device degradation.
The radiation induced oxide and interface charge densities were estimated through subthreshold measurements, and the trap densities were found to increase by one order in magnitude after a total gamma dose of 1 Mrad.
Other parameters like transconductance, subthreshold swing, and drain saturation current are also investigated as a function of gamma dose.
American Psychological Association (APA)
Nagaraj, Shashank& Singh, Vikram& Jayanna, Halepoojar Siddalingappa& Balakrishna, Kagalagodu Manjunathiah& Damle, Ramakrishna. 2013. 60Co-Gamma Ray Induced Total Dose Effects on P-Channel MOSFETs. Indian Journal of Materials Science،Vol. 2013, no. 2013, pp.1-5.
https://search.emarefa.net/detail/BIM-473767
Modern Language Association (MLA)
Nagaraj, Shashank…[et al.]. 60Co-Gamma Ray Induced Total Dose Effects on P-Channel MOSFETs. Indian Journal of Materials Science No. 2013 (2013), pp.1-5.
https://search.emarefa.net/detail/BIM-473767
American Medical Association (AMA)
Nagaraj, Shashank& Singh, Vikram& Jayanna, Halepoojar Siddalingappa& Balakrishna, Kagalagodu Manjunathiah& Damle, Ramakrishna. 60Co-Gamma Ray Induced Total Dose Effects on P-Channel MOSFETs. Indian Journal of Materials Science. 2013. Vol. 2013, no. 2013, pp.1-5.
https://search.emarefa.net/detail/BIM-473767
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-473767