A Very Robust AlGaNGaN HEMT Technology to High Forward Gate Bias and Current

Joint Authors

Vetury, Ramakrishna
Heller, Eric R.
Shealy, Jeffrey B.
Coutu, Ronald A.
Christiansen, Bradley D.

Source

Active and Passive Electronic Components

Issue

Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-4, 4 p.

Publisher

Hindawi Publishing Corporation

Publication Date

2012-08-28

Country of Publication

Egypt

No. of Pages

4

Main Subjects

Physics

Abstract EN

Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation.

We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V) and current (>1.8 A/mm) for >17.5 hours exhibiting only a slight change in gate diode characteristic, little decrease in maximum drain current, with only a 0.1 V positive threshold voltage shift, and, remarkably, a persisting breakdown voltage exceeding 200 V.

American Psychological Association (APA)

Christiansen, Bradley D.& Heller, Eric R.& Coutu, Ronald A.& Vetury, Ramakrishna& Shealy, Jeffrey B.. 2012. A Very Robust AlGaNGaN HEMT Technology to High Forward Gate Bias and Current. Active and Passive Electronic Components،Vol. 2012, no. 2012, pp.1-4.
https://search.emarefa.net/detail/BIM-476044

Modern Language Association (MLA)

Christiansen, Bradley D.…[et al.]. A Very Robust AlGaNGaN HEMT Technology to High Forward Gate Bias and Current. Active and Passive Electronic Components No. 2012 (2012), pp.1-4.
https://search.emarefa.net/detail/BIM-476044

American Medical Association (AMA)

Christiansen, Bradley D.& Heller, Eric R.& Coutu, Ronald A.& Vetury, Ramakrishna& Shealy, Jeffrey B.. A Very Robust AlGaNGaN HEMT Technology to High Forward Gate Bias and Current. Active and Passive Electronic Components. 2012. Vol. 2012, no. 2012, pp.1-4.
https://search.emarefa.net/detail/BIM-476044

Data Type

Journal Articles

Language

English

Notes

Includes bibliographical references

Record ID

BIM-476044