A Very Robust AlGaNGaN HEMT Technology to High Forward Gate Bias and Current
Joint Authors
Vetury, Ramakrishna
Heller, Eric R.
Shealy, Jeffrey B.
Coutu, Ronald A.
Christiansen, Bradley D.
Source
Active and Passive Electronic Components
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-4, 4 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-08-28
Country of Publication
Egypt
No. of Pages
4
Main Subjects
Abstract EN
Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation.
We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V) and current (>1.8 A/mm) for >17.5 hours exhibiting only a slight change in gate diode characteristic, little decrease in maximum drain current, with only a 0.1 V positive threshold voltage shift, and, remarkably, a persisting breakdown voltage exceeding 200 V.
American Psychological Association (APA)
Christiansen, Bradley D.& Heller, Eric R.& Coutu, Ronald A.& Vetury, Ramakrishna& Shealy, Jeffrey B.. 2012. A Very Robust AlGaNGaN HEMT Technology to High Forward Gate Bias and Current. Active and Passive Electronic Components،Vol. 2012, no. 2012, pp.1-4.
https://search.emarefa.net/detail/BIM-476044
Modern Language Association (MLA)
Christiansen, Bradley D.…[et al.]. A Very Robust AlGaNGaN HEMT Technology to High Forward Gate Bias and Current. Active and Passive Electronic Components No. 2012 (2012), pp.1-4.
https://search.emarefa.net/detail/BIM-476044
American Medical Association (AMA)
Christiansen, Bradley D.& Heller, Eric R.& Coutu, Ronald A.& Vetury, Ramakrishna& Shealy, Jeffrey B.. A Very Robust AlGaNGaN HEMT Technology to High Forward Gate Bias and Current. Active and Passive Electronic Components. 2012. Vol. 2012, no. 2012, pp.1-4.
https://search.emarefa.net/detail/BIM-476044
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-476044