Strain Effects on Optical Properties of (In,Ga)‎As-Capped InAs Quantum Dots Grown by Molecular Beam Epitaxy on GaAs (113)‎A Substrate

Abstract EN

We have investigated the optical properties of InAs/GaAs (113)A quantum dots grown by molecular beam epitaxy (MBE) capped by (In,Ga)As.

Reflection high-energy electron diffraction (RHEED) is used to investigate the formation process of InAs quantum dots (QDs).

A broadening of the PL emission due to size distribution of the dots, when InAs dots are capped by GaAs, was observed.

A separation between large and small quantum dots, when they are encapsulated by InGaAs, was shown due to hydrostatic and biaxial strain action on large and small dots grown under specifically growth conditions.

The PL polarization measurements have shown that the small dots require an elongated form, but the large dots present a quasi-isotropic behavior.