Charge-Trapping Devices Using Multilayered Dielectrics for Nonvolatile Memory Applications

Abstract EN

Charge-trapping devices using multilayered dielectrics were studied for nonvolatile memory applications.

The device structure is Al/Y2O3/Ta2O5/SiO2/Si (MYTOS).

The MYTOS field effect transistors were fabricated using Ta2O5 as the charge storage layer and Y2O3 as the blocking layer.

The electrical characteristics of memory window, program/erase characteristics, and data retention were examined.

The memory window is about 1.6 V.

Using a pulse voltage of 6 V, a threshold voltage shift of ~1 V can be achieved within 10 ns.

The MYTOS transistors can retain a memory window of 0.81 V for 10 years.