Analysis of Kink Reduction in SOI MOSFET Using Selective Back Oxide Structure
Joint Authors
Pal, Dipankar
Chandra, Mahesh
Mazhari, Baquer
Narayanan, M.
al-Nashash, Hasan
Source
Active and Passive Electronic Components
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-9, 9 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-07-24
Country of Publication
Egypt
No. of Pages
9
Main Subjects
Abstract EN
This paper presents a complete analysis of the kink effect in SOI MOSFET and proposes a method for eliminating kink effect observed in the current-voltage output characteristics of a partially depleted SOI MOSFET device.
In this method, back oxide for the device is introduced at selected regions below the source and drain and not continuously as in an SOI device giving rise to what is termed a “SELBOX” structure.
Selective back oxide structure with different gap lengths and thicknesses was studied.
Results obtained through numerical simulations indicate that the proposed structure can significantly reduce the kink while still preserving major advantages offered by conventional SOI structure.
Although the new structure is capable of eliminating kink, for narrow gaps the device may still exhibit some kink effect.
A device model that explains the kink behavior of the structure for varying gap lengths is also developed.
American Psychological Association (APA)
Narayanan, M.& al-Nashash, Hasan& Mazhari, Baquer& Pal, Dipankar& Chandra, Mahesh. 2012. Analysis of Kink Reduction in SOI MOSFET Using Selective Back Oxide Structure. Active and Passive Electronic Components،Vol. 2012, no. 2012, pp.1-9.
https://search.emarefa.net/detail/BIM-481252
Modern Language Association (MLA)
Narayanan, M.…[et al.]. Analysis of Kink Reduction in SOI MOSFET Using Selective Back Oxide Structure. Active and Passive Electronic Components No. 2012 (2012), pp.1-9.
https://search.emarefa.net/detail/BIM-481252
American Medical Association (AMA)
Narayanan, M.& al-Nashash, Hasan& Mazhari, Baquer& Pal, Dipankar& Chandra, Mahesh. Analysis of Kink Reduction in SOI MOSFET Using Selective Back Oxide Structure. Active and Passive Electronic Components. 2012. Vol. 2012, no. 2012, pp.1-9.
https://search.emarefa.net/detail/BIM-481252
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-481252