Fowler-Nordheim Tunneling Characterization on Poly1-Poly2 Capacitors for the Implementation of Analog Memories in CMOS 0.5 μm Technology
Joint Authors
Morales-Acevedo, Arturo
Rosales-Quintero, Pedro
Molinar-Solis, Jesus Ezequiel
Diaz-Sanchez, Alejandro
Garcia-Lozano, Rodolfo Z.
Rocha-Perez, Jose M.
Tinajero-Perez, Enrique J.
Source
Advances in Condensed Matter Physics
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-7, 7 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-02-23
Country of Publication
Egypt
No. of Pages
7
Main Subjects
Abstract EN
The experimental results of the Fowler-Nordheim characterization using poly1-poly2 capacitors on CMOS ON Semi 0.5 μm technology are presented.
This characterization allows the development, design, and characterization of a new current-mode analog nonvolatile memory.
Experimental results of the memory cell architecture are presented and demonstrate the usefulness of the proposed architecture.
American Psychological Association (APA)
Tinajero-Perez, Enrique J.& Molinar-Solis, Jesus Ezequiel& Garcia-Lozano, Rodolfo Z.& Rosales-Quintero, Pedro& Rocha-Perez, Jose M.& Diaz-Sanchez, Alejandro…[et al.]. 2014. Fowler-Nordheim Tunneling Characterization on Poly1-Poly2 Capacitors for the Implementation of Analog Memories in CMOS 0.5 μm Technology. Advances in Condensed Matter Physics،Vol. 2014, no. 2014, pp.1-7.
https://search.emarefa.net/detail/BIM-486785
Modern Language Association (MLA)
Tinajero-Perez, Enrique J.…[et al.]. Fowler-Nordheim Tunneling Characterization on Poly1-Poly2 Capacitors for the Implementation of Analog Memories in CMOS 0.5 μm Technology. Advances in Condensed Matter Physics No. 2014 (2014), pp.1-7.
https://search.emarefa.net/detail/BIM-486785
American Medical Association (AMA)
Tinajero-Perez, Enrique J.& Molinar-Solis, Jesus Ezequiel& Garcia-Lozano, Rodolfo Z.& Rosales-Quintero, Pedro& Rocha-Perez, Jose M.& Diaz-Sanchez, Alejandro…[et al.]. Fowler-Nordheim Tunneling Characterization on Poly1-Poly2 Capacitors for the Implementation of Analog Memories in CMOS 0.5 μm Technology. Advances in Condensed Matter Physics. 2014. Vol. 2014, no. 2014, pp.1-7.
https://search.emarefa.net/detail/BIM-486785
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-486785
