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Nanostructural, Chemical, and Mechanical Features of nc-Si : H Films Prepared by PECVD
Joint Authors
Nam, Hee-Jong
Cho, Nam-Hee
Son, Jong-Ick
Source
International Journal of Photoenergy
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-8, 8 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-03-14
Country of Publication
Egypt
No. of Pages
8
Main Subjects
Abstract EN
This study examined the effects of film thickness on the nanostructural, chemical, and mechanical features of nc-Si:H films deposited by plasma-enhanced chemical vapor deposition.
SiH4 and H2 were used as the source gases, and the deposition time was varied from 10 to 360 min.
The mean nanocrystallites size in the Si films increased from ∼6 to ∼8 nm with increasing film thickness from 85 to 4150 nm.
Moreover, the nanocrystallite concentration and elastic modulus increased from ∼7.5 to ∼45% and from 135 to 147 Gpa, respectively.
In the 4150 nm thick film, the relative volume fraction of Si nanocrystallites and relative fraction of Si–H bonds in the films were approximately ∼45% and ∼74.5%, respectively.
American Psychological Association (APA)
Son, Jong-Ick& Nam, Hee-Jong& Cho, Nam-Hee. 2012. Nanostructural, Chemical, and Mechanical Features of nc-Si : H Films Prepared by PECVD. International Journal of Photoenergy،Vol. 2012, no. 2012, pp.1-8.
https://search.emarefa.net/detail/BIM-487724
Modern Language Association (MLA)
Son, Jong-Ick…[et al.]. Nanostructural, Chemical, and Mechanical Features of nc-Si : H Films Prepared by PECVD. International Journal of Photoenergy No. 2012 (2012), pp.1-8.
https://search.emarefa.net/detail/BIM-487724
American Medical Association (AMA)
Son, Jong-Ick& Nam, Hee-Jong& Cho, Nam-Hee. Nanostructural, Chemical, and Mechanical Features of nc-Si : H Films Prepared by PECVD. International Journal of Photoenergy. 2012. Vol. 2012, no. 2012, pp.1-8.
https://search.emarefa.net/detail/BIM-487724
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-487724