Structural and Electrical Characteristics of Metal-Ferroelectric Pb1.1(Zr0.40Ti0.60)O3-Insulator (ZnO)-Silicon Capacitors for Nonvolatile Applications
Joint Authors
Ilangovan, Rajangam
Krishnamoorthi, S. R.
Venkatesh, K. S.
Source
Advances in Condensed Matter Physics
Issue
Vol. 2013, Issue 2013 (31 Dec. 2013), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2013-07-24
Country of Publication
Egypt
No. of Pages
6
Main Subjects
Abstract EN
In this work metal-ferroelectric-insulator-semiconductor (MFIS) thin-film structures using Pb1.1Zr0.40Ti0.60O3 (PZT) as the ferroelectric layer and zinc oxide (ZnO) as the insulator layer were fabricated on n-type (100) Si substrate.
Pb1.1Zr0.40Ti0.60O3 and ZnO thin films were prepared on Si by the sol-gel route and thermal deposition method, respectively.
On the optimized PZT (140 nm) and ZnO (40 nm) films were examined by scanning electron microscope (SEM).
From AFM data the root mean square (r.m.s.) roughness of the film surface is 13.11 nm.
The leakage current density of ZnO/n-Si (MIS) structure was as low as 1.8 × 10−8 A/cm2 at 2.5 V.
The capacitance versus voltage (C-V) characteristics of the annealed ZnO/Si (MIS) diode indicated the good interface properties and no hysteresis was observed.
Au/PZT (140 nm)/ZnO (40 nm)/Si (100) leakage-current density was about 5.7 × 10−8 A/cm2 at positive bias voltage of 3 V.
The large memory window width in C-V (capacitance-voltage) curve of Au/PZT/ZnO/Si capacitor was about 2.9 V under ±12 V which thus possibly enables nonvolatile applications.
The memory window as a function of temperature was also discussed.
American Psychological Association (APA)
Krishnamoorthi, S. R.& Venkatesh, K. S.& Ilangovan, Rajangam. 2013. Structural and Electrical Characteristics of Metal-Ferroelectric Pb1.1(Zr0.40Ti0.60)O3-Insulator (ZnO)-Silicon Capacitors for Nonvolatile Applications. Advances in Condensed Matter Physics،Vol. 2013, no. 2013, pp.1-6.
https://search.emarefa.net/detail/BIM-490997
Modern Language Association (MLA)
Krishnamoorthi, S. R.…[et al.]. Structural and Electrical Characteristics of Metal-Ferroelectric Pb1.1(Zr0.40Ti0.60)O3-Insulator (ZnO)-Silicon Capacitors for Nonvolatile Applications. Advances in Condensed Matter Physics No. 2013 (2013), pp.1-6.
https://search.emarefa.net/detail/BIM-490997
American Medical Association (AMA)
Krishnamoorthi, S. R.& Venkatesh, K. S.& Ilangovan, Rajangam. Structural and Electrical Characteristics of Metal-Ferroelectric Pb1.1(Zr0.40Ti0.60)O3-Insulator (ZnO)-Silicon Capacitors for Nonvolatile Applications. Advances in Condensed Matter Physics. 2013. Vol. 2013, no. 2013, pp.1-6.
https://search.emarefa.net/detail/BIM-490997
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-490997