Characterization of Series Resistance and Mobility Degradation Parameter and Optimizing Choice of Oxide Thickness in Thin Oxide N-Channel MOSFET
Joint Authors
Maouhoub, Noureddine
Rais, Khalid
Source
Active and Passive Electronic Components
Issue
Vol. 2011, Issue 2011 (31 Dec. 2011), pp.1-4, 4 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2011-10-13
Country of Publication
Egypt
No. of Pages
4
Main Subjects
Abstract EN
We present two methods to extract the series resistance and the mobility degradation parameter in short-channel MOSFETs.
The principle of the first method is based on the comparison between the exponential model and the classical model of effective mobility and for the second method is based on directly calculating the two parameters by solving a system of two equations obtained by using two different points in strong inversion at small drain bias from the characteristic Id (Vg).
The results obtained by these techniques have shown a better agreement with data measurements and allowed in the same time to determine the surface roughness amplitude and its influence on the maximum drain current and give the optimal oxide thickness.
American Psychological Association (APA)
Maouhoub, Noureddine& Rais, Khalid. 2011. Characterization of Series Resistance and Mobility Degradation Parameter and Optimizing Choice of Oxide Thickness in Thin Oxide N-Channel MOSFET. Active and Passive Electronic Components،Vol. 2011, no. 2011, pp.1-4.
https://search.emarefa.net/detail/BIM-492599
Modern Language Association (MLA)
Maouhoub, Noureddine& Rais, Khalid. Characterization of Series Resistance and Mobility Degradation Parameter and Optimizing Choice of Oxide Thickness in Thin Oxide N-Channel MOSFET. Active and Passive Electronic Components No. 2011 (2011), pp.1-4.
https://search.emarefa.net/detail/BIM-492599
American Medical Association (AMA)
Maouhoub, Noureddine& Rais, Khalid. Characterization of Series Resistance and Mobility Degradation Parameter and Optimizing Choice of Oxide Thickness in Thin Oxide N-Channel MOSFET. Active and Passive Electronic Components. 2011. Vol. 2011, no. 2011, pp.1-4.
https://search.emarefa.net/detail/BIM-492599
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-492599