Noise Performance of Heterojunction DDR MITATT Devices Based on Si~Si1−xGex at W-Band

Abstract EN

Noise performance of different structures of Si~Si1-xGex anisotype heterojunction double-drift region (DDR) mixed tunneling and avalanche transit time (MITATT) devices has been studied.

The devices are designed for operation at millimeter-wave W-band frequencies.

A simulation model has been developed to study the noise spectral density and noise measure of the device.

Two different mole fractions x=0.1 and x=0.3 of Ge and corresponding four types of device structure are considered for the simulation.

The results show that the n−Si0.7Ge0.3~P-Si heterojunction DDR structure of MITATT device excels all other structures as regards noise spectral density (0.82×10−16 V2 sec) and noise measure (33.09 dB) as well as millimeter-wave properties such as DC-to-RF conversion efficiency (20.15%) and CW power output (773.29 mW).