Gate Stack Engineering and Thermal Treatment on Electrical and Interfacial Properties of TiPtHfO2InAs pMOS Capacitors
Joint Authors
Chyi, Jen-Inn
Li, Pei-Wen
Chiu, Pei-Chin
Hsu, Jei-Wei
Chien, Chung-Yen
Source
Active and Passive Electronic Components
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-07-02
Country of Publication
Egypt
No. of Pages
6
Main Subjects
Abstract EN
Effects of gate stack engineering and thermal treatment on electrical and interfacial properties of Ti/Pt/HfO2/InAs metal insulator semiconductor (MIS) capacitors were systematically evaluated in terms of transmission electron microscopy, energy dispersive X-ray spectroscopy, current-voltage, and capacitance-voltage characterizations.
A 10 nm thick Pt metal effectively suppresses the formation of interfacial oxide, TiO2, between the Ti gate and HfO2 gate dielectric layer, enhancing the gate modulation on the surface potential of InAs.
An in situ HfO2 deposition onto the n-InAs channel with an interfacial layer (IL) of one-monolayer InP followed by a 300°C post-metal-anneal produces a high-quality HfO2/InAs interface and thus unravels the annoying Fermi-level pinning, which is evidenced by the distinct capacitance dips in the high-/low-frequency C-V characteristics.
The interface trap states could be further suppressed by replacing the InP IL by an As-rich InAs, which is substantiated by a gate leakage reduction and a steep voltage-dependent depletion capacitance.
American Psychological Association (APA)
Chien, Chung-Yen& Hsu, Jei-Wei& Chiu, Pei-Chin& Chyi, Jen-Inn& Li, Pei-Wen. 2012. Gate Stack Engineering and Thermal Treatment on Electrical and Interfacial Properties of TiPtHfO2InAs pMOS Capacitors. Active and Passive Electronic Components،Vol. 2012, no. 2012, pp.1-6.
https://search.emarefa.net/detail/BIM-494015
Modern Language Association (MLA)
Chien, Chung-Yen…[et al.]. Gate Stack Engineering and Thermal Treatment on Electrical and Interfacial Properties of TiPtHfO2InAs pMOS Capacitors. Active and Passive Electronic Components No. 2012 (2012), pp.1-6.
https://search.emarefa.net/detail/BIM-494015
American Medical Association (AMA)
Chien, Chung-Yen& Hsu, Jei-Wei& Chiu, Pei-Chin& Chyi, Jen-Inn& Li, Pei-Wen. Gate Stack Engineering and Thermal Treatment on Electrical and Interfacial Properties of TiPtHfO2InAs pMOS Capacitors. Active and Passive Electronic Components. 2012. Vol. 2012, no. 2012, pp.1-6.
https://search.emarefa.net/detail/BIM-494015
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-494015