Gate Stack Engineering and Thermal Treatment on Electrical and Interfacial Properties of TiPtHfO2InAs pMOS Capacitors

Joint Authors

Chyi, Jen-Inn
Li, Pei-Wen
Chiu, Pei-Chin
Hsu, Jei-Wei
Chien, Chung-Yen

Source

Active and Passive Electronic Components

Issue

Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-6, 6 p.

Publisher

Hindawi Publishing Corporation

Publication Date

2012-07-02

Country of Publication

Egypt

No. of Pages

6

Main Subjects

Physics

Abstract EN

Effects of gate stack engineering and thermal treatment on electrical and interfacial properties of Ti/Pt/HfO2/InAs metal insulator semiconductor (MIS) capacitors were systematically evaluated in terms of transmission electron microscopy, energy dispersive X-ray spectroscopy, current-voltage, and capacitance-voltage characterizations.

A 10 nm thick Pt metal effectively suppresses the formation of interfacial oxide, TiO2, between the Ti gate and HfO2 gate dielectric layer, enhancing the gate modulation on the surface potential of InAs.

An in situ HfO2 deposition onto the n-InAs channel with an interfacial layer (IL) of one-monolayer InP followed by a 300°C post-metal-anneal produces a high-quality HfO2/InAs interface and thus unravels the annoying Fermi-level pinning, which is evidenced by the distinct capacitance dips in the high-/low-frequency C-V characteristics.

The interface trap states could be further suppressed by replacing the InP IL by an As-rich InAs, which is substantiated by a gate leakage reduction and a steep voltage-dependent depletion capacitance.

American Psychological Association (APA)

Chien, Chung-Yen& Hsu, Jei-Wei& Chiu, Pei-Chin& Chyi, Jen-Inn& Li, Pei-Wen. 2012. Gate Stack Engineering and Thermal Treatment on Electrical and Interfacial Properties of TiPtHfO2InAs pMOS Capacitors. Active and Passive Electronic Components،Vol. 2012, no. 2012, pp.1-6.
https://search.emarefa.net/detail/BIM-494015

Modern Language Association (MLA)

Chien, Chung-Yen…[et al.]. Gate Stack Engineering and Thermal Treatment on Electrical and Interfacial Properties of TiPtHfO2InAs pMOS Capacitors. Active and Passive Electronic Components No. 2012 (2012), pp.1-6.
https://search.emarefa.net/detail/BIM-494015

American Medical Association (AMA)

Chien, Chung-Yen& Hsu, Jei-Wei& Chiu, Pei-Chin& Chyi, Jen-Inn& Li, Pei-Wen. Gate Stack Engineering and Thermal Treatment on Electrical and Interfacial Properties of TiPtHfO2InAs pMOS Capacitors. Active and Passive Electronic Components. 2012. Vol. 2012, no. 2012, pp.1-6.
https://search.emarefa.net/detail/BIM-494015

Data Type

Journal Articles

Language

English

Notes

Includes bibliographical references

Record ID

BIM-494015