KLL Dielectronic Recombination of Highly Charged Sulfur and Silicon Ions
Author
Source
Journal of Atomic and Molecular Physics
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-5, 5 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-05-21
Country of Publication
Egypt
No. of Pages
5
Main Subjects
Abstract EN
Dielectronic recombination measurements for highly charged ions were performed at the Stockholm refrigerated electron beam ion trap.
We have obtained KLL DR resonance strengths for highly charged H- and He-like sulfur and silicon ions.
The experimental results are compared with the theoretical data obtained from GRASP II code.
Both the experimental and calculated results agree well within the experimental error bars.
Moreover, the dielectronic recombination resonance strengths are used to obtain the new scaling parameters by incorporating our results with the previous measurements and to check the behaviour of scaling formula for H- and He-like isoelectronic sequences.
American Psychological Association (APA)
Ali, Safdar. 2014. KLL Dielectronic Recombination of Highly Charged Sulfur and Silicon Ions. Journal of Atomic and Molecular Physics،Vol. 2014, no. 2014, pp.1-5.
https://search.emarefa.net/detail/BIM-496000
Modern Language Association (MLA)
Ali, Safdar. KLL Dielectronic Recombination of Highly Charged Sulfur and Silicon Ions. Journal of Atomic and Molecular Physics No. 2014 (2014), pp.1-5.
https://search.emarefa.net/detail/BIM-496000
American Medical Association (AMA)
Ali, Safdar. KLL Dielectronic Recombination of Highly Charged Sulfur and Silicon Ions. Journal of Atomic and Molecular Physics. 2014. Vol. 2014, no. 2014, pp.1-5.
https://search.emarefa.net/detail/BIM-496000
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-496000