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Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications
Joint Authors
Oh, Woongkyo
Hussain, Shahzada Qamar
Dao, Vinh Ai
Yi, Junsin
Lee, Youngseok
Source
International Journal of Photoenergy
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-5, 5 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-03-12
Country of Publication
Egypt
No. of Pages
5
Main Subjects
Abstract EN
It is difficult to deposit extremely thin a-Si:H layer in heterojunction with intrinsic thin layer (HIT) solar cell due to thermal damage and tough process control.
This study aims to understand oxide passivation mechanism of silicon surface using rapid thermal oxidation (RTO) process by examining surface effective lifetime and surface recombination velocity.
The presence of thin insulating a-Si:H layer is the key to get high Voc by lowering the leakage current (I0) which improves the efficiency of HIT solar cell.
The ultrathin thermal passivation silicon oxide (SiO2) layer was deposited by RTO system in the temperature range 500–950°C for 2 to 6 minutes.
The thickness of the silicon oxide layer was affected by RTO annealing temperature and treatment time.
The best value of surface recombination velocity was recorded for the sample treated at a temperature of 850°C for 6 minutes at O2 flow rate of 3 Lpm.
A surface recombination velocity below 25 cm/s was obtained for the silicon oxide layer of 4 nm thickness.
This ultrathin SiO2 layer was employed for the fabrication of HIT solar cell structure instead of a-Si:H, (i) layer and the passivation and tunneling effects of the silicon oxide layer were exploited.
The photocurrent was decreased with the increase of illumination intensity and SiO2 thickness.
American Psychological Association (APA)
Lee, Youngseok& Oh, Woongkyo& Dao, Vinh Ai& Hussain, Shahzada Qamar& Yi, Junsin. 2012. Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications. International Journal of Photoenergy،Vol. 2012, no. 2012, pp.1-5.
https://search.emarefa.net/detail/BIM-496049
Modern Language Association (MLA)
Lee, Youngseok…[et al.]. Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications. International Journal of Photoenergy No. 2012 (2012), pp.1-5.
https://search.emarefa.net/detail/BIM-496049
American Medical Association (AMA)
Lee, Youngseok& Oh, Woongkyo& Dao, Vinh Ai& Hussain, Shahzada Qamar& Yi, Junsin. Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications. International Journal of Photoenergy. 2012. Vol. 2012, no. 2012, pp.1-5.
https://search.emarefa.net/detail/BIM-496049
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-496049