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Preparation and Characterization of (Aun-SnO2SiO2SiAl) MIS Device for Optoelectronic Application
Joint Authors
Abdul Muhsien, Marwa
Agool, Ibrahim R.
Salem, Evan T.
Source
International Journal of Optics
Issue
Vol. 2013, Issue 2013 (31 Dec. 2013), pp.1-9, 9 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2013-12-28
Country of Publication
Egypt
No. of Pages
9
Main Subjects
Abstract EN
SnO2 thin films were prepared by using rapid thermal oxidation (RTO) of Sn at oxidation temperature 873 K and oxidation time 90 sec on semiconductor n-type and p-type silicon substrate.
In order to characterize the prepared device, the electrical properties have been measured which revealed that the barrier height is greatly depended on interfacial layer thickness (SiO2).
The value of peak response (n-SnO2/SiO2/n-Si) device was 0.16 A/W which is greater than that of (n-SnO2/SiO2/p-Si) device whose value was 0.12 A/W, while the rise time was found to be shorter.
American Psychological Association (APA)
Abdul Muhsien, Marwa& Salem, Evan T.& Agool, Ibrahim R.. 2013. Preparation and Characterization of (Aun-SnO2SiO2SiAl) MIS Device for Optoelectronic Application. International Journal of Optics،Vol. 2013, no. 2013, pp.1-9.
https://search.emarefa.net/detail/BIM-496256
Modern Language Association (MLA)
Abdul Muhsien, Marwa…[et al.]. Preparation and Characterization of (Aun-SnO2SiO2SiAl) MIS Device for Optoelectronic Application. International Journal of Optics No. 2013 (2013), pp.1-9.
https://search.emarefa.net/detail/BIM-496256
American Medical Association (AMA)
Abdul Muhsien, Marwa& Salem, Evan T.& Agool, Ibrahim R.. Preparation and Characterization of (Aun-SnO2SiO2SiAl) MIS Device for Optoelectronic Application. International Journal of Optics. 2013. Vol. 2013, no. 2013, pp.1-9.
https://search.emarefa.net/detail/BIM-496256
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-496256