Room-Temperature Hysteresis in a Hole-Based Quantum Dot Memory Structure
Joint Authors
Bonato, Leo
Nowozin, Tobias
Balamash, Abdullah
Ajour, Mohammed N.
Bimberg, Dieter
Daqrouq, Khaled
Narodovitch, Michael
Source
Issue
Vol. 2013, Issue 2013 (31 Dec. 2013), pp.1-4, 4 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2013-08-24
Country of Publication
Egypt
No. of Pages
4
Main Subjects
Engineering Sciences and Information Technology
Chemistry
Abstract EN
We demonstrate a memory effect in self-assembled InAs/Al0.9Ga0.1As quantum dots (QDs) near room temperature.
The QD layer is embedded into a modulation-doped field-effect transistor (MODFET) which allows to charge and discharge the QDs and read out the logic state of the QDs.
The hole storage times in the QDs decrease from seconds at 200 K down to milliseconds at room temperature.
American Psychological Association (APA)
Nowozin, Tobias& Narodovitch, Michael& Bonato, Leo& Bimberg, Dieter& Ajour, Mohammed N.& Daqrouq, Khaled…[et al.]. 2013. Room-Temperature Hysteresis in a Hole-Based Quantum Dot Memory Structure. Journal of Nanotechnology،Vol. 2013, no. 2013, pp.1-4.
https://search.emarefa.net/detail/BIM-498972
Modern Language Association (MLA)
Nowozin, Tobias…[et al.]. Room-Temperature Hysteresis in a Hole-Based Quantum Dot Memory Structure. Journal of Nanotechnology No. 2013 (2013), pp.1-4.
https://search.emarefa.net/detail/BIM-498972
American Medical Association (AMA)
Nowozin, Tobias& Narodovitch, Michael& Bonato, Leo& Bimberg, Dieter& Ajour, Mohammed N.& Daqrouq, Khaled…[et al.]. Room-Temperature Hysteresis in a Hole-Based Quantum Dot Memory Structure. Journal of Nanotechnology. 2013. Vol. 2013, no. 2013, pp.1-4.
https://search.emarefa.net/detail/BIM-498972
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-498972
