Influence of Series Massive Resistance on Capacitance and Conductance Characteristics in Gate-Recessed Nanoscale SOI MOSFETs
Joint Authors
Chelly, Avraham
Karsenty, Avraham
Source
Active and Passive Electronic Components
Issue
Vol. 2013, Issue 2013 (31 Dec. 2013), pp.1-11, 11 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2013-12-11
Country of Publication
Egypt
No. of Pages
11
Main Subjects
Abstract EN
Ultrathin body (UTB) and nanoscale body (NSB) SOI MOSFET devices, having a channel thickness (tSI) ranging from 46 nm (UTB scale) down to 1.6 nm (NSB scale), were fabricated using a selective “gate recessed” process on the same silicon wafer.
The gate-to-channel capacitance (Cp) and conductance (Gp) complementary characteristics, measured for NSB devices, were found to be radically different from those measured for UTBS.
Consistent Cp and Gp trends are observed by varying the frequency (f), the channel length (L), and the channel thickness (tSI).
In this paper, we show that these trends can be analytically modeled by a massive series resistance depending on the gate voltage and on the channel thickness.
The effects of leakage conductance and interface trap density are also modeled.
This modeling approach may be useful to analyze and/or simulate electrical behavior of nanodevices in which series resistance is of a great concern.
American Psychological Association (APA)
Karsenty, Avraham& Chelly, Avraham. 2013. Influence of Series Massive Resistance on Capacitance and Conductance Characteristics in Gate-Recessed Nanoscale SOI MOSFETs. Active and Passive Electronic Components،Vol. 2013, no. 2013, pp.1-11.
https://search.emarefa.net/detail/BIM-500113
Modern Language Association (MLA)
Karsenty, Avraham& Chelly, Avraham. Influence of Series Massive Resistance on Capacitance and Conductance Characteristics in Gate-Recessed Nanoscale SOI MOSFETs. Active and Passive Electronic Components No. 2013 (2013), pp.1-11.
https://search.emarefa.net/detail/BIM-500113
American Medical Association (AMA)
Karsenty, Avraham& Chelly, Avraham. Influence of Series Massive Resistance on Capacitance and Conductance Characteristics in Gate-Recessed Nanoscale SOI MOSFETs. Active and Passive Electronic Components. 2013. Vol. 2013, no. 2013, pp.1-11.
https://search.emarefa.net/detail/BIM-500113
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-500113