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Thickness Dependence of Optoelectrical Properties of Mo-Doped In2O3 Films Deposited on Polyethersulfone Substrates by Ion-Beam-Assisted Evaporation
Joint Authors
Liou, Yeuh-Yeong
Liu, Chi-Chang
He, Ju-Liang
Jeng, Yaug-Fea
Kuo, Chin-Chiuan
Lin, Chung-Chih
Source
Issue
Vol. 2010, Issue 2010 (31 Dec. 2010), pp.1-7, 7 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2010-12-01
Country of Publication
Egypt
No. of Pages
7
Main Subjects
Engineering Sciences and Information Technology
Chemistry
Civil Engineering
Abstract EN
Indium molybdenum oxide (IMO) films were deposited onto the polyethersulfone (PES) substrates by ion-beam-assisted evaporation (IBAE) deposition at low temperature in this study.
The effects of film thickness on their optical and electrical properties were investigated.
The results show that the deposited IMO films exhibit a preferred orientation of B(222).
The electrical resistivity of the deposited film initially reduces then subsequently increases with film thickness.
The IMO film with the lowest resistivity of 7.61 × 10−4 ohm-cm has been achieved when the film thickness is 120 nm.
It exhibits a satisfactory surface roughness Rpv of 8.75 nm and an average visible transmittance of 78.7%.
American Psychological Association (APA)
Kuo, Chin-Chiuan& Liu, Chi-Chang& Jeng, Yaug-Fea& Lin, Chung-Chih& Liou, Yeuh-Yeong& He, Ju-Liang. 2010. Thickness Dependence of Optoelectrical Properties of Mo-Doped In2O3 Films Deposited on Polyethersulfone Substrates by Ion-Beam-Assisted Evaporation. Journal of Nanomaterials،Vol. 2010, no. 2010, pp.1-7.
https://search.emarefa.net/detail/BIM-502376
Modern Language Association (MLA)
Kuo, Chin-Chiuan…[et al.]. Thickness Dependence of Optoelectrical Properties of Mo-Doped In2O3 Films Deposited on Polyethersulfone Substrates by Ion-Beam-Assisted Evaporation. Journal of Nanomaterials No. 2010 (2010), pp.1-7.
https://search.emarefa.net/detail/BIM-502376
American Medical Association (AMA)
Kuo, Chin-Chiuan& Liu, Chi-Chang& Jeng, Yaug-Fea& Lin, Chung-Chih& Liou, Yeuh-Yeong& He, Ju-Liang. Thickness Dependence of Optoelectrical Properties of Mo-Doped In2O3 Films Deposited on Polyethersulfone Substrates by Ion-Beam-Assisted Evaporation. Journal of Nanomaterials. 2010. Vol. 2010, no. 2010, pp.1-7.
https://search.emarefa.net/detail/BIM-502376
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-502376