The Improvement of Reliability of High-kMetal Gate pMOSFET Device with Various PMA Conditions
Joint Authors
Cheng, Chi-Yun
Zhang, Wenqi
Yang, Yi-Lin
Yeh, Wen-kuan
Source
Active and Passive Electronic Components
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-4, 4 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-06-13
Country of Publication
Egypt
No. of Pages
4
Main Subjects
Abstract EN
The oxygen and nitrogen were shown to diffuse through the TiN layer in the high-k/metal gate devices during PMA.
Both the oxygen and nitrogen annealing will reduce the gate leakage current without increasing oxide thickness.
The threshold voltages of the devices changed with various PMA conditions.
The reliability of the devices, especially for the oxygen annealed devices, was improved after PMA treatments.
American Psychological Association (APA)
Yang, Yi-Lin& Zhang, Wenqi& Cheng, Chi-Yun& Yeh, Wen-kuan. 2012. The Improvement of Reliability of High-kMetal Gate pMOSFET Device with Various PMA Conditions. Active and Passive Electronic Components،Vol. 2012, no. 2012, pp.1-4.
https://search.emarefa.net/detail/BIM-505116
Modern Language Association (MLA)
Yang, Yi-Lin…[et al.]. The Improvement of Reliability of High-kMetal Gate pMOSFET Device with Various PMA Conditions. Active and Passive Electronic Components No. 2012 (2012), pp.1-4.
https://search.emarefa.net/detail/BIM-505116
American Medical Association (AMA)
Yang, Yi-Lin& Zhang, Wenqi& Cheng, Chi-Yun& Yeh, Wen-kuan. The Improvement of Reliability of High-kMetal Gate pMOSFET Device with Various PMA Conditions. Active and Passive Electronic Components. 2012. Vol. 2012, no. 2012, pp.1-4.
https://search.emarefa.net/detail/BIM-505116
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-505116
