Silicon Carbide Emitter Turn-Off Thyristor
Joint Authors
Wang, Jun
Li, Jun
Atcitty, Stan
Huang, Alex Q.
Melcher, Jerry
Wang, Gangyao
Source
International Journal of Power Management Electronics
Issue
Vol. 2008, Issue 2008 (31 Dec. 2008), pp.1-5, 5 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2008-07-01
Country of Publication
Egypt
No. of Pages
5
Main Subjects
Abstract EN
A novel MOS-controlled SiC thyristor device, the SiC emitter turn-off thyristor (ETO) is a promising technology for future high-voltage switching applications because it integrates the excellent current conduction capability of a SiC thyristor with a simple MOS-control interface.
Through unity-gain turn-off, the SiC ETO also achieves excellent Safe Operation Area (SOA) and faster switching speeds than silicon ETOs.
The world's first 4.5-kV SiC ETO prototype shows a forward voltage drop of 4.26 V at 26.5 A/cm2 current density at room and elevated temperatures.
Tested in an inductive circuit with a 2.5 kV DC link voltage and a 9.56-A load current, the SiC ETO shows a fast turn-off time of 1.63 microseconds and a low 9.88 mJ turn-off energy.
The low switching loss indicates that the SiC ETO could operate at about 4 kHz if 100 W/cm2 conduction and the 100 W/cm2 turn-off losses can be removed by the thermal management system.
This frequency capability is about 4 times higher than 4.5-kV-class silicon power devices.
The preliminary demonstration shows that the SiC ETO is a promising candidate for high-frequency, high-voltage power conversion applications, and additional developments to optimize the device for higher voltage (>5 kV) and higher frequency (10 kHz) are needed.
American Psychological Association (APA)
Wang, Jun& Wang, Gangyao& Li, Jun& Huang, Alex Q.& Melcher, Jerry& Atcitty, Stan. 2008. Silicon Carbide Emitter Turn-Off Thyristor. International Journal of Power Management Electronics،Vol. 2008, no. 2008, pp.1-5.
https://search.emarefa.net/detail/BIM-505791
Modern Language Association (MLA)
Wang, Jun…[et al.]. Silicon Carbide Emitter Turn-Off Thyristor. International Journal of Power Management Electronics No. 2008 (2008), pp.1-5.
https://search.emarefa.net/detail/BIM-505791
American Medical Association (AMA)
Wang, Jun& Wang, Gangyao& Li, Jun& Huang, Alex Q.& Melcher, Jerry& Atcitty, Stan. Silicon Carbide Emitter Turn-Off Thyristor. International Journal of Power Management Electronics. 2008. Vol. 2008, no. 2008, pp.1-5.
https://search.emarefa.net/detail/BIM-505791
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-505791