Fabrication of Si3N4 Nanocrystals and Nanowires Using PECVD
Joint Authors
Song, Jingwei
Ma, Xiying
Wei, Chen
Zui, Wang
Chen, Zhongpin
Source
Advances in Materials Science and Engineering
Issue
Vol. 2010, Issue 2010 (31 Dec. 2010), pp.1-4, 4 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2010-06-29
Country of Publication
Egypt
No. of Pages
4
Main Subjects
Engineering Sciences and Information Technology
Abstract EN
Si3N4 nanowires and nanocrystals were prepared on Si substrates with or without Fe catalyst using silane (SiH4) and nitrogen (N2) as reactive gases through plasma-enhanced chemical vapor deposition (PECVD) technology.
With Fe catalyst, Si3N4 nanowires were developed, indicating that Fe catalyst played a role for Si3N4 molecules directionally depositing into strings.
The density of the nanowires is closely related to the density of Fe catalyst.
When the density of Fe ions on the substrate was decreased remarkably, a smooth superlong Si3N4 nanowire with 12 μm in length was fabricated.
Having analyzed the growth mechanism, a growth model for Si3N4 nanowires was developed.
The growth of Si3N4 nanocrystallines was attributed to be a vapor-solid (V-S) deposition process.
American Psychological Association (APA)
Song, Jingwei& Ma, Xiying& Zui, Wang& Wei, Chen& Chen, Zhongpin. 2010. Fabrication of Si3N4 Nanocrystals and Nanowires Using PECVD. Advances in Materials Science and Engineering،Vol. 2010, no. 2010, pp.1-4.
https://search.emarefa.net/detail/BIM-505954
Modern Language Association (MLA)
Song, Jingwei…[et al.]. Fabrication of Si3N4 Nanocrystals and Nanowires Using PECVD. Advances in Materials Science and Engineering No. 2010 (2010), pp.1-4.
https://search.emarefa.net/detail/BIM-505954
American Medical Association (AMA)
Song, Jingwei& Ma, Xiying& Zui, Wang& Wei, Chen& Chen, Zhongpin. Fabrication of Si3N4 Nanocrystals and Nanowires Using PECVD. Advances in Materials Science and Engineering. 2010. Vol. 2010, no. 2010, pp.1-4.
https://search.emarefa.net/detail/BIM-505954
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-505954
