Modeling of Photoconductivity of Porous Silicon
Joint Authors
Sokolovskii, B. S.
Pavlyk, M. R.
Parandii, P. P.
Monastyrskii, L. S.
Source
Issue
Vol. 2011, Issue 2011 (31 Dec. 2011), pp.1-4, 4 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2011-08-24
Country of Publication
Egypt
No. of Pages
4
Main Subjects
Abstract EN
The paper investigates a model of the photoconductivity of macroporous silicon in the conditions of homogeneous generation of photocarriers.
By the finite element method, the stationary photoconductivity and the time evolution of photoconductivity after instantaneous shutdown of light are calculated.
Dependences of the stationary photoconductivity and relaxation time of photoconductivity on the velocity of recombination of nonequilibrium carriers at the surfaces of pores, radius of pores, and average distance between them are analyzed.
American Psychological Association (APA)
Monastyrskii, L. S.& Sokolovskii, B. S.& Pavlyk, M. R.& Parandii, P. P.. 2011. Modeling of Photoconductivity of Porous Silicon. Advances in OptoElectronics،Vol. 2011, no. 2011, pp.1-4.
https://search.emarefa.net/detail/BIM-506326
Modern Language Association (MLA)
Monastyrskii, L. S.…[et al.]. Modeling of Photoconductivity of Porous Silicon. Advances in OptoElectronics No. 2011 (2011), pp.1-4.
https://search.emarefa.net/detail/BIM-506326
American Medical Association (AMA)
Monastyrskii, L. S.& Sokolovskii, B. S.& Pavlyk, M. R.& Parandii, P. P.. Modeling of Photoconductivity of Porous Silicon. Advances in OptoElectronics. 2011. Vol. 2011, no. 2011, pp.1-4.
https://search.emarefa.net/detail/BIM-506326
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-506326
