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Tunnel Contacts for Spin Injection into Silicon : The Si-Co Interface with and without a MgO Tunnel Barrier—A Study by High-Resolution Rutherford Backscattering
Joint Authors
Dash, S. P.
Kopold, P.
Carstanjen, H. D.
Goll, D.
Source
Advances in Materials Science and Engineering
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-13, 13 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2011-12-22
Country of Publication
Egypt
No. of Pages
13
Main Subjects
Engineering Sciences and Information Technology
Abstract EN
In order to obtain high spin injection efficiency, a ferromagnet-semiconducor Schottky contact must be of high crystalline quality.
This is particularly important in the case of ferromagnet-silicon interfaces, since these elements tend to mix and form silicides.
In this study Co-Si (100) interfaces were prepared in three different ways: by evaporation at room temperature, low temperature (−60C°), and with Sb as surfactant, and their interface structures were analyzed by high-resolution RBS (HRBS).
In all cases more or less strong in-diffusion of Co with subsequent silicide formation was observed.
In order to prevent the mixing of Co and Si, ultra thin MgO tunnel barriers were introduced in-between them.
In situ HRBS characterization confirms that the MgO films were very uniform and prevented the mixing of the Si substrate with deposited Co and Fe films effectively, even at 450C°.
American Psychological Association (APA)
Dash, S. P.& Goll, D.& Kopold, P.& Carstanjen, H. D.. 2011. Tunnel Contacts for Spin Injection into Silicon : The Si-Co Interface with and without a MgO Tunnel Barrier—A Study by High-Resolution Rutherford Backscattering. Advances in Materials Science and Engineering،Vol. 2012, no. 2012, pp.1-13.
https://search.emarefa.net/detail/BIM-506658
Modern Language Association (MLA)
Dash, S. P.…[et al.]. Tunnel Contacts for Spin Injection into Silicon : The Si-Co Interface with and without a MgO Tunnel Barrier—A Study by High-Resolution Rutherford Backscattering. Advances in Materials Science and Engineering No. 2012 (2012), pp.1-13.
https://search.emarefa.net/detail/BIM-506658
American Medical Association (AMA)
Dash, S. P.& Goll, D.& Kopold, P.& Carstanjen, H. D.. Tunnel Contacts for Spin Injection into Silicon : The Si-Co Interface with and without a MgO Tunnel Barrier—A Study by High-Resolution Rutherford Backscattering. Advances in Materials Science and Engineering. 2011. Vol. 2012, no. 2012, pp.1-13.
https://search.emarefa.net/detail/BIM-506658
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-506658