Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes
Joint Authors
Oehme, M.
Schulze, J.
Kasper, E.
Werner, J.
Arguirov, T.
Kittler, M.
Source
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-4, 4 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-02-28
Country of Publication
Egypt
No. of Pages
4
Main Subjects
Abstract EN
Room temperature direct band gap emission is observed for Si-substrate-based Ge p-i-n heterojunction photodiode structures operated under forward bias.
Comparisons of electroluminescence with photoluminescence spectra allow separating emission from intrinsic Ge (0.8 eV) and highly doped Ge (0.73 eV).
Electroluminescence stems from carrier injection into the intrinsic layer, whereas photoluminescence originates from the highly n-doped top layer because the exciting visible laser wavelength is strongly absorbed in Ge.
High doping levels led to an apparent band gap narrowing from carrier-impurity interaction.
The emission shifts to higher wavelengths with increasing current level which is explained by device heating.
The heterostructure layer sequence and the light emitting device are similar to earlier presented photodetectors.
This is an important aspect for monolithic integration of silicon microelectronics and silicon photonics.
American Psychological Association (APA)
Kasper, E.& Oehme, M.& Arguirov, T.& Werner, J.& Kittler, M.& Schulze, J.. 2012. Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes. Advances in OptoElectronics،Vol. 2012, no. 2012, pp.1-4.
https://search.emarefa.net/detail/BIM-507835
Modern Language Association (MLA)
Kasper, E.…[et al.]. Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes. Advances in OptoElectronics No. 2012 (2012), pp.1-4.
https://search.emarefa.net/detail/BIM-507835
American Medical Association (AMA)
Kasper, E.& Oehme, M.& Arguirov, T.& Werner, J.& Kittler, M.& Schulze, J.. Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes. Advances in OptoElectronics. 2012. Vol. 2012, no. 2012, pp.1-4.
https://search.emarefa.net/detail/BIM-507835
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-507835