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Effect of High-Temperature Annealing on Ion-Implanted Silicon Solar Cells
Joint Authors
Hwang, Hae Chul
Kang, Min Gu
Hwang, Wook Jung
Boo, Hyunpil
Park, Sungeun
Lee, KyungDong
Kim, Donghwan
Kang, Hee Oh
Tark, Sung Ju
Lee, Jong-Han
Kim, Seongtak
Source
International Journal of Photoenergy
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-03-20
Country of Publication
Egypt
No. of Pages
6
Main Subjects
Abstract EN
P-type and n-type wafers were implanted with phosphorus and boron, respectively, for emitter formation and were annealed subsequently at 950∼1050∘C for 30∼90 min for activation.
Boron emitters were activated at 1000∘C or higher, while phosphorus emitters were activated at 950∘C.
QSSPC measurements show that the implied Voc of boron emitters increases about 15 mV and the J01 decreases by deep junction annealing even after the activation due to the reduced recombination in the emitter.
However, for phosphorus emitters the implied Voc decreases from 622 mV to 560 mV and the J01 increases with deep junction annealing.
This is due to the abrupt decrease in the bulk lifetime of the p-type wafer itself from 178 μs to 14 μs.
PC1D simulation based on these results shows that, for p-type implanted solar cells, increasing the annealing temperature and time abruptly decreases the efficiency (Δηabs=−1.3%), while, for n-type implanted solar cells, deep junction annealing increases the efficiency and Voc, especially (Δηabs=+0.4%) for backside emitter solar cells.
American Psychological Association (APA)
Boo, Hyunpil& Lee, Jong-Han& Kang, Min Gu& Lee, KyungDong& Kim, Seongtak& Hwang, Hae Chul…[et al.]. 2012. Effect of High-Temperature Annealing on Ion-Implanted Silicon Solar Cells. International Journal of Photoenergy،Vol. 2012, no. 2012, pp.1-6.
https://search.emarefa.net/detail/BIM-508362
Modern Language Association (MLA)
Boo, Hyunpil…[et al.]. Effect of High-Temperature Annealing on Ion-Implanted Silicon Solar Cells. International Journal of Photoenergy No. 2012 (2012), pp.1-6.
https://search.emarefa.net/detail/BIM-508362
American Medical Association (AMA)
Boo, Hyunpil& Lee, Jong-Han& Kang, Min Gu& Lee, KyungDong& Kim, Seongtak& Hwang, Hae Chul…[et al.]. Effect of High-Temperature Annealing on Ion-Implanted Silicon Solar Cells. International Journal of Photoenergy. 2012. Vol. 2012, no. 2012, pp.1-6.
https://search.emarefa.net/detail/BIM-508362
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-508362