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Experiments on the Release of CMOS-Micromachined Metal Layers
Joint Authors
Fernández, Daniel
Madrenas, Jordi
Ricart, Jordi
Source
Issue
Vol. 2010, Issue 2010 (31 Dec. 2010), pp.1-7, 7 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2010-05-17
Country of Publication
Egypt
No. of Pages
7
Main Subjects
Abstract EN
We present experimental results on the release of MEMS devices manufactured using the standard CMOS interconnection metal layers as structural elements and the insulating silicon dioxide as sacrificial layers.
Experiments compare the release results of four different etching agents in a CMOS technology (hydrofluoric acid, ammonium fluoride, a mixture of acetic acid and ammonium fluoride, and hydrogen fluoride), describe various phenomena found during the etching process, and show the release results of multilayer structures.
American Psychological Association (APA)
Fernández, Daniel& Ricart, Jordi& Madrenas, Jordi. 2010. Experiments on the Release of CMOS-Micromachined Metal Layers. Journal of Sensors،Vol. 2010, no. 2010, pp.1-7.
https://search.emarefa.net/detail/BIM-509652
Modern Language Association (MLA)
Fernández, Daniel…[et al.]. Experiments on the Release of CMOS-Micromachined Metal Layers. Journal of Sensors No. 2010 (2010), pp.1-7.
https://search.emarefa.net/detail/BIM-509652
American Medical Association (AMA)
Fernández, Daniel& Ricart, Jordi& Madrenas, Jordi. Experiments on the Release of CMOS-Micromachined Metal Layers. Journal of Sensors. 2010. Vol. 2010, no. 2010, pp.1-7.
https://search.emarefa.net/detail/BIM-509652
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-509652