Effect of p-Layer and i-Layer Properties on the Electrical Behaviour of Advanced a-Si : Ha-SiGe:H Thin Film Solar Cell from Numerical Modeling Prospect

Abstract EN

The effect of p-layer and i-layer characteristics such as thickness and doping concentration on the electrical behaviors of the a-Si:H/a-SiGe:H thin film heterostructure solar cells such as electric field, photogeneration rate, and recombination rate through the cell is investigated.

Introducing Ge atoms to the Si lattice in Si-based solar cells is an effective approach in improving their characteristics.

In particular, current density of the cell can be enhanced without deteriorating its open-circuit voltage.

Optimization shows that for an appropriate Ge concentration, the efficiency of a-Si:H/a-SiGe solar cell is improved by about 6% compared with the traditional a-Si:H solar cell.

This work presents a novel numerical evaluation and optimization of amorphous silicon double-junction (a-Si:H/a-SiGe:H) thin film solar cells and focuses on optimization of a-SiGe:H midgap single-junction solar cell based on the optimization of the doping concentration of the p-layer, thicknesses of the p-layer and i-layer, and Ge content in the film.

Maximum efficiency of 23.5%, with short-circuit current density of 267 A/m2 and open-circuit voltage of 1.13 V for double-junction solar cell has been achieved.