![](/images/graphics-bg.png)
Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide
Author
Source
Advances in Materials Science and Engineering
Issue
Vol. 2013, Issue 2013 (31 Dec. 2013), pp.1-5, 5 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2013-11-13
Country of Publication
Egypt
No. of Pages
5
Main Subjects
Engineering Sciences and Information Technology
Abstract EN
The interfacial properties between silicon and hafnium oxide (HfO2) are explored by the gated-diode method and the subthreshold measurement.
The density of interface-trapped charges, the current induced by surface defect centers, the surface recombination velocity, and the surface state capture cross-section are obtained in this work.
Among the interfacial properties, the surface state capture cross-section is approximately constant even if the postdeposition annealing condition is changed.
This effective capture cross-section of surface states is about 2.4 × 10−15 cm2, which may be an inherent nature in the HfO2/Si interface.
American Psychological Association (APA)
Chiu, Fu-Chien. 2013. Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide. Advances in Materials Science and Engineering،Vol. 2013, no. 2013, pp.1-5.
https://search.emarefa.net/detail/BIM-510738
Modern Language Association (MLA)
Chiu, Fu-Chien. Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide. Advances in Materials Science and Engineering No. 2013 (2013), pp.1-5.
https://search.emarefa.net/detail/BIM-510738
American Medical Association (AMA)
Chiu, Fu-Chien. Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide. Advances in Materials Science and Engineering. 2013. Vol. 2013, no. 2013, pp.1-5.
https://search.emarefa.net/detail/BIM-510738
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-510738