Optoelectronic properties of ZnOPSn-Si heterojunctions

Abstract EN

In this work a colloid of Nano crystalline Zn O particles is prepared by chemical method, and then sprayed on porous silicon substrate which is prepared by electrochemical etching under a current density of 15 mA / cm2 for 10 min.

The initial radius of the Zn O particles is found to be (2.2 nm).

FTIR spectra exhibit the presence of Zn–O bond which indicates the formation of Zn O particles.

Also spectra reveals the formation of SiH x (x = 1-2) and Si-O bond which indicates the presence of porous layer.

High performance rectifying was obtained, with high photoresponsivety of 0.54 A / W at 400 nm.

The corresponding quantum efficiency was 166.7 %.

The results show that Zn O on porous silicon (PS) structures will act as good candidates for making highly efficient photo diodes.