Preparation and the study optical and electrical properties of thin films for optoelectronic applications

Abstract EN

Conductive transparent In2O3 thin films with (222) preferred orientation were prepared by thermal oxidation (TO) in static air of indium thin films at condition (250°C / 25 min).

Detailed structural, electrical, and optical characteristics of the film are presented.

The data are interpreted to give a direct band gap of (3.6) eV and indirect band gap of (2.5) eV.

The In2O3 film has sheet resistance as low as (20) Ω / □.

In absence of any post-deposition annealing conditions.

The mobility of these films was estimated to be (31) cm2.

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