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Study of a silicon power diode using a time dependent hydrodynamic model
Joint Authors
Tabikh, S.
Latreche, Seloua
Morel, H.
Maille, C.
Gontrand, C.
Source
Sciences et Technologie : Sciences Exactes
Issue
Vol. 2003, Issue 20 (31 Dec. 2003), pp.67-72, 6 p.
Publisher
Publication Date
2003-12-31
Country of Publication
Algeria
No. of Pages
6
Main Subjects
Topics
Abstract EN
A one-dimensional device simulator based on the hydrodynamic model is developed for the simulation and analysis of high voltage ambipolar devices.
This simulator has the capability for both self-consistent transient and steady state regime study.
The discretization scheme used in the algorithm shows good numerical stability and accuracy.
A transient simulation study is carried out on a PIN diode.
Information about electrical potential, electron and holes concentration, carriers temperatures, average velocities, considering the transient response to a high voltage, shows this simulator quite a good tool to study power devices in futures trends.
While no significant differences appear between our results and drift diffusion model ones, for the quiescent state, it is not the case for the transient regime.
Moreover, our model does not handle some strong simplification hypothesis ; for instance it is pointed out that carrier explicit acceleration term can not be dodged so easily, as reported before, for an accurate transient study.
American Psychological Association (APA)
Tabikh, S.& Latreche, Seloua& Morel, H.& Maille, C.& Gontrand, C.. 2003. Study of a silicon power diode using a time dependent hydrodynamic model. Sciences et Technologie : Sciences Exactes،Vol. 2003, no. 20, pp.67-72.
https://search.emarefa.net/detail/BIM-540597
Modern Language Association (MLA)
Tabikh, S.…[et al.]. Study of a silicon power diode using a time dependent hydrodynamic model. Sciences et Technologie : Sciences Exactes No. 20 (Dec. 2003), pp.67-72.
https://search.emarefa.net/detail/BIM-540597
American Medical Association (AMA)
Tabikh, S.& Latreche, Seloua& Morel, H.& Maille, C.& Gontrand, C.. Study of a silicon power diode using a time dependent hydrodynamic model. Sciences et Technologie : Sciences Exactes. 2003. Vol. 2003, no. 20, pp.67-72.
https://search.emarefa.net/detail/BIM-540597
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references : p. 72
Record ID
BIM-540597