Temperature variation effects in partially depleted SOI n-channel MOSFETs

Abstract EN

Silicon-on insulator (SOI) technology has attracted a great attention as a probable alternative candidate for low power, high performances applications.

Nowadays electronic is subjected to temperature variations and is, some time, obliged to operate at high temperature.

In this paper, based on some simulations results we obtained using ATLAS SILVACO TCAD software, we have investigate the impact of temperature variation on the electrical properties of a PD SOI n-MOSFET.

This study allows us to highlight the existence of a ZTC point as well in the linear that in the saturated region.

We also examine the off state leakage current dependence with temperature.

At the end of this workself heating effects are also studied.