Characterization of the copper oxide thin films deposited by DC sputtering technique
Other Title(s)
دراسة خصائص اغشيه أوكسيد النحاس المحضرة بطريقة الترذيذ للتيار المستمر
Joint Authors
Said, Saba N.
Abbas, Amin J.
Khalaf, Muhammad Khammas
Source
Engineering and Technology Journal
Issue
Vol. 32, Issue 4B(s) (30 Apr. 2014), pp.770-776, 7 p.
Publisher
Publication Date
2014-04-30
Country of Publication
Iraq
No. of Pages
7
Main Subjects
Topics
Abstract EN
Nanocrystalline Copper Oxide films were deposited on glass substrates by plasma dc sputtering.
The effected of discharge current on the structural and optical properties of sputtered films were studied .X-ray diffraction peak of Cu2O (111) and Cu4O3 (112) direction was observed at discharge current of (15-30) mA when annealed at 500 0C for 2 h.
The optical energy gap for the prepared films is estimated to be in (2.05- 2.3) eV range.
It was found that the effect of preparation conditions on thin films thickness strongly depends on the discharge current of argon plasma.
American Psychological Association (APA)
Khalaf, Muhammad Khammas& Said, Saba N.& Abbas, Amin J.. 2014. Characterization of the copper oxide thin films deposited by DC sputtering technique. Engineering and Technology Journal،Vol. 32, no. 4B(s), pp.770-776.
https://search.emarefa.net/detail/BIM-627930
Modern Language Association (MLA)
Khalaf, Muhammad Khammas…[et al.]. Characterization of the copper oxide thin films deposited by DC sputtering technique. Engineering and Technology Journal Vol. 32, no. 4B(s) (2014), pp.770-776.
https://search.emarefa.net/detail/BIM-627930
American Medical Association (AMA)
Khalaf, Muhammad Khammas& Said, Saba N.& Abbas, Amin J.. Characterization of the copper oxide thin films deposited by DC sputtering technique. Engineering and Technology Journal. 2014. Vol. 32, no. 4B(s), pp.770-776.
https://search.emarefa.net/detail/BIM-627930
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references : p. 775-776
Record ID
BIM-627930
