Design band energy diagram of SnO2 CdS-CdTe thin film heterojunction using I-V an d C-V measurements
Other Title(s)
رسم مخطط الطاقة لمفرق الهجين للغشاء SnO2 CdS-CdTe الرقيق باستخدام قياسات تيار-جهد وسعة- جهد
Joint Authors
Razzuqi, Muhammad A.
Said, Nada Muhammad
Abd Allah, Rasha Abbas
Source
Engineering and Technology Journal
Issue
Vol. 32, Issue 3B(s) (31 Mar. 2014), pp.607-614, 8 p.
Publisher
Publication Date
2014-03-31
Country of Publication
Iraq
No. of Pages
8
Main Subjects
Abstract EN
SnO2/CdS-CdTe heterojunction has been fabricated by thermal evaporation technique, 0.05 μm thicknesses of SnO2 nanostructure was evaporated as thin layer to be used as an antireflection and as transparent conducting oxide.
The prepared cell has been annealed at 573K for 180 minutes.
The general morphology of SnO2 films was imaged by using Atomic Force Microscope (AFM), the image shows that the average grain size of the prepared film is constructed from nanostructure of dimensions in order of 72 nm.
There are two wide peaks were presents at the x-ray pattern which were refers to SnO2 and is in agreement with the literature of American Standard of Testing Materials (ASTM).
The capacitance- voltage a measurement has studied at 102 Hz frequency, the capacitance- voltage measurements indicated that these cells are abrupt.
The capacitance at zero bias, built in voltage, zero bias depletion region width and the carrier concentration have been calculated.
The carrier transport mechanism for SnO2 / CdS-CdTe heterojunction in dark is tunneling-recombination.
The value of ideality factor is 1.56 and the reverse saturation current is 9.6×10-10A.
Band energy lineup for SnO2 / n-CdS-p-CdTe heterojunction has been investigated by using I-V and C-V measurements.
American Psychological Association (APA)
Abd Allah, Rasha Abbas& Said, Nada Muhammad& Razzuqi, Muhammad A.. 2014. Design band energy diagram of SnO2 CdS-CdTe thin film heterojunction using I-V an d C-V measurements. Engineering and Technology Journal،Vol. 32, no. 3B(s), pp.607-614.
https://search.emarefa.net/detail/BIM-628520
Modern Language Association (MLA)
Abd Allah, Rasha Abbas…[et al.]. Design band energy diagram of SnO2 CdS-CdTe thin film heterojunction using I-V an d C-V measurements. Engineering and Technology Journal Vol. 32, no. 3B(s) (2014), pp.607-614.
https://search.emarefa.net/detail/BIM-628520
American Medical Association (AMA)
Abd Allah, Rasha Abbas& Said, Nada Muhammad& Razzuqi, Muhammad A.. Design band energy diagram of SnO2 CdS-CdTe thin film heterojunction using I-V an d C-V measurements. Engineering and Technology Journal. 2014. Vol. 32, no. 3B(s), pp.607-614.
https://search.emarefa.net/detail/BIM-628520
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references : p. 614
Record ID
BIM-628520