Photovoltaic properties of CdS Si heterojunction prepared by DC plasma sputtering technique

Abstract EN

CdS / Si heterojunction has been fabricated by dc plasma sputtering technique.

Polycrystalline CdS films have been prepared by dc plasma sputtering technique on Si substrate.

The current – voltage under illumination showed that the photocurrent increases with increasing incident illumination intensity for CdS/Si heterojunction.

The CdS thin films have been sputtered under vacuum of (9×10-2 ,8×10-2, 6×10-2,5×10-2) mbar, the heterojunction has better photovoltaic properties.

The open circuit voltage (Voc) and the short circuit current (Isc) were found to vary with working discharge pressure , and the efficiency is 6.72% at 50.3 mW / cm2.