Morphology and electrical properties of Cu X Zn1-XO thin films prepared by PLD technique

Abstract EN

Cu X Zn1-XO films with different x content have been prepared by pulse laser deposition technique at room temperatures (RT) and different annealing temperatures (373 and 473) K.

The effect of x content of Cu (0, 0.2, 0.4, 0.6, 0.8) wt.% on morphology and electrical properties of CuXZn1-XO thin films have been studied.

AFM measurements showed that the average grain size values for CuXZn1-xO thin films at RT and different annealing temperatures (373, 473) K decreases, while the average Roughness values increase with increasing x content.

The D.C conductivity for all films increases as the x content increase and decreases with increasing the annealing temperatures.

Hall measurements showed that there are two types of conductance (n- type and p-type charge carriers).

Also the variation of drift velocity (vd), carrier life time (), and free mean path (l) with different x content and annealing temperatures were measured.