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The effect of current density on the structures and photoluminescence of n-type porous silicon
Other Title(s)
تأثير كثافة التيار على الخصائص التركيبية و طيف اللمعان الضوئي للسيليكون المسامي من النوع n
Joint Authors
Salih, Manal Ali
Abbas, Nada Khudayr
Ibrahim, Isam Muhammad
Source
Issue
Vol. 15, Issue 34 (31 Dec. 2017), pp.15-28, 14 p.
Publisher
University of Baghdad College of Science
Publication Date
2017-12-31
Country of Publication
Iraq
No. of Pages
14
Main Subjects
Abstract EN
Porous silicon (PS) layers were formed on n-type silicon (Si) wafers using Photo- electrochemical Etching technique (PEC) was used to produce porous silicon for n-type with orientation of (111).
The effects of current density were investigated at: (10, 20, 30, 40, and50) mA/cm2 with etching time: 10min.
X-ray diffraction studies showed distinct variations between the fresh silicon surface and the synthesized porous silicon.
The maximum crystal size of Porous Silicon is (33.9nm) and minimum is (2.6nm) The Atomic force microscopy (AFM) analysis and Field Emission Scanning Electron Microscope (FESEM) were used to study the morphology of porous silicon layer.
AFM results showed that root mean square (RMS) of roughness and the grain size of porous silicon decreased as etching current density increased and FESEM showed that a homogeneous pattern and confirms the formation of uniform porous silicon.
The chemical bonding and structure were investigated by using Fourier transformation infrared spectroscopy (FTIR).
The band gap of the samples obtained from photoluminescence (PL).
These results showed that the band gap of porous silicon increase with increasing porosity.
American Psychological Association (APA)
Abbas, Nada Khudayr& Ibrahim, Isam Muhammad& Salih, Manal Ali. 2017. The effect of current density on the structures and photoluminescence of n-type porous silicon. Iraqi Journal of Physics،Vol. 15, no. 34, pp.15-28.
https://search.emarefa.net/detail/BIM-754724
Modern Language Association (MLA)
Abbas, Nada Khudayr…[et al.]. The effect of current density on the structures and photoluminescence of n-type porous silicon. Iraqi Journal of Physics Vol. 15, no. 34 (2017), pp.15-28.
https://search.emarefa.net/detail/BIM-754724
American Medical Association (AMA)
Abbas, Nada Khudayr& Ibrahim, Isam Muhammad& Salih, Manal Ali. The effect of current density on the structures and photoluminescence of n-type porous silicon. Iraqi Journal of Physics. 2017. Vol. 15, no. 34, pp.15-28.
https://search.emarefa.net/detail/BIM-754724
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references : p. 27-28
Record ID
BIM-754724