![](/images/graphics-bg.png)
In-depth simulation analysis of the SI-sio2 interface traps by the charge pumping
Joint Authors
Source
Issue
Vol. 2015, Issue 10 (30 Jun. 2015), pp.1-9, 9 p.
Publisher
Centre Universitaire Amine El-Okel Elhadj Moussa Ag Akhamouk de Tamanghasset
Publication Date
2015-06-30
Country of Publication
Algeria
No. of Pages
9
Main Subjects
Natural & Life Sciences (Multidisciplinary)
Abstract EN
The purpose of this work is to contribute to a better electrical characterization of the Silicon-Oxide interface By the Three level charge pmping.
The introduction of a third voltage level in the gate pulse gives access to the same parameters as the two charge pumping but requires less simplifying assumptions.
We show that the three charge pumping and its variants are powerful tools to determine the Dit (E) and Q(E) distribution.
The simulated results are in a good agreement with recent and different experimental results.
-
American Psychological Association (APA)
Sellami, M.& Sellami, A.. 2015. In-depth simulation analysis of the SI-sio2 interface traps by the charge pumping. Revue Afak Ilmia،Vol. 2015, no. 10, pp.1-9.
https://search.emarefa.net/detail/BIM-765722
Modern Language Association (MLA)
Sellami, M.& Sellami, A.. In-depth simulation analysis of the SI-sio2 interface traps by the charge pumping. Revue Afak Ilmia No. 10 (Jun. 2015), pp.1-9.
https://search.emarefa.net/detail/BIM-765722
American Medical Association (AMA)
Sellami, M.& Sellami, A.. In-depth simulation analysis of the SI-sio2 interface traps by the charge pumping. Revue Afak Ilmia. 2015. Vol. 2015, no. 10, pp.1-9.
https://search.emarefa.net/detail/BIM-765722
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references : p. 8-9
Record ID
BIM-765722