Simple experimental method for estimating B and gap in silicon

Other Title(s)

طريقة تجريبية بسيطة لتقدير عرض فجوة الطاقة في السيليكون

Author

Nur al-Din, Salah al-Din

Source

Tishreen University Journal for Research and Scientific Studies : Engineering Sciences Series

Issue

Vol. 39, Issue 3 (30 Jun. 2017), pp.509-517, 9 p.

Publisher

Tishreen University

Publication Date

2017-06-30

Country of Publication

Syria

No. of Pages

9

Main Subjects

Information Technology and Computer Science

Abstract EN

In this work, energy band gap is estimated by passing small forward current through silicon junction diode.

The junction voltage variation is studied versus temperature at constant current, and the T-V curve is drawn.

From temperature – voltage curve, energy gap is determined.

The temperature dependence of has been studied, too.

American Psychological Association (APA)

Nur al-Din, Salah al-Din. 2017. Simple experimental method for estimating B and gap in silicon. Tishreen University Journal for Research and Scientific Studies : Engineering Sciences Series،Vol. 39, no. 3, pp.509-517.
https://search.emarefa.net/detail/BIM-847522

Modern Language Association (MLA)

Nur al-Din, Salah al-Din. Simple experimental method for estimating B and gap in silicon. Tishreen University Journal for Research and Scientific Studies : Engineering Sciences Series Vol. 39, no. 3 (2017), pp.509-517.
https://search.emarefa.net/detail/BIM-847522

American Medical Association (AMA)

Nur al-Din, Salah al-Din. Simple experimental method for estimating B and gap in silicon. Tishreen University Journal for Research and Scientific Studies : Engineering Sciences Series. 2017. Vol. 39, no. 3, pp.509-517.
https://search.emarefa.net/detail/BIM-847522

Data Type

Journal Articles

Language

English

Notes

Record ID

BIM-847522