Simple experimental method for estimating B and gap in silicon
Other Title(s)
طريقة تجريبية بسيطة لتقدير عرض فجوة الطاقة في السيليكون
Author
Source
Tishreen University Journal for Research and Scientific Studies : Engineering Sciences Series
Issue
Vol. 39, Issue 3 (30 Jun. 2017), pp.509-517, 9 p.
Publisher
Publication Date
2017-06-30
Country of Publication
Syria
No. of Pages
9
Main Subjects
Information Technology and Computer Science
Abstract EN
In this work, energy band gap is estimated by passing small forward current through silicon junction diode.
The junction voltage variation is studied versus temperature at constant current, and the T-V curve is drawn.
From temperature – voltage curve, energy gap is determined.
The temperature dependence of has been studied, too.
American Psychological Association (APA)
Nur al-Din, Salah al-Din. 2017. Simple experimental method for estimating B and gap in silicon. Tishreen University Journal for Research and Scientific Studies : Engineering Sciences Series،Vol. 39, no. 3, pp.509-517.
https://search.emarefa.net/detail/BIM-847522
Modern Language Association (MLA)
Nur al-Din, Salah al-Din. Simple experimental method for estimating B and gap in silicon. Tishreen University Journal for Research and Scientific Studies : Engineering Sciences Series Vol. 39, no. 3 (2017), pp.509-517.
https://search.emarefa.net/detail/BIM-847522
American Medical Association (AMA)
Nur al-Din, Salah al-Din. Simple experimental method for estimating B and gap in silicon. Tishreen University Journal for Research and Scientific Studies : Engineering Sciences Series. 2017. Vol. 39, no. 3, pp.509-517.
https://search.emarefa.net/detail/BIM-847522
Data Type
Journal Articles
Language
English
Notes
Record ID
BIM-847522