MOSFETs modeling using artificial neural network
Joint Authors
Fridja, D.
Bella Baci, A.
al-Duri, Y.
Source
Journal of New Technology and Materials
Issue
Vol. 8, Issue 2 (30 Dec. 2018), pp.55-58, 4 p.
Publisher
Larbi Ben M'hidi Oum el-Bouaghi University
Publication Date
2018-12-30
Country of Publication
Algeria
No. of Pages
4
Main Subjects
Information Technology and Computer Science
Abstract EN
The invention of the transistor in 1948 launched a real technological revolution that continues today there are two families of transistors responding to different operating principles: the bipolar transistors invented in 1984.
But they are considered as an old technology.
A type of transistors derived the field effect transistors (MOSFET), dominate today and more useful than the bipolar.
The current technology needs an intelligence technique, modeling of electronic components by artificial neural network.
Our work within this framework, as it presents to us a first step in exploiting the principles fantastic techniques of artificial intelligence in the field of modeling and simulation of electronic components such as MOSFETs
American Psychological Association (APA)
Salmiyah, M.& Fridja, D.& Bella Baci, A.& al-Duri, Y.. 2018. MOSFETs modeling using artificial neural network. Journal of New Technology and Materials،Vol. 8, no. 2, pp.55-58.
https://search.emarefa.net/detail/BIM-874081
Modern Language Association (MLA)
Fridja, D.…[et al.]. MOSFETs modeling using artificial neural network. Journal of New Technology and Materials Vol. 8, no. 2 (2018), pp.55-58.
https://search.emarefa.net/detail/BIM-874081
American Medical Association (AMA)
Salmiyah, M.& Fridja, D.& Bella Baci, A.& al-Duri, Y.. MOSFETs modeling using artificial neural network. Journal of New Technology and Materials. 2018. Vol. 8, no. 2, pp.55-58.
https://search.emarefa.net/detail/BIM-874081
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references : p. 58
Record ID
BIM-874081