MOSFETs modeling using artificial neural network

Joint Authors

Fridja, D.
Bella Baci, A.
al-Duri, Y.

Source

Journal of New Technology and Materials

Issue

Vol. 8, Issue 2 (30 Dec. 2018), pp.55-58, 4 p.

Publisher

Larbi Ben M'hidi Oum el-Bouaghi University

Publication Date

2018-12-30

Country of Publication

Algeria

No. of Pages

4

Main Subjects

Information Technology and Computer Science

Abstract EN

The invention of the transistor in 1948 launched a real technological revolution that continues today there are two families of transistors responding to different operating principles: the bipolar transistors invented in 1984.

But they are considered as an old technology.

A type of transistors derived the field effect transistors (MOSFET), dominate today and more useful than the bipolar.

The current technology needs an intelligence technique, modeling of electronic components by artificial neural network.

Our work within this framework, as it presents to us a first step in exploiting the principles fantastic techniques of artificial intelligence in the field of modeling and simulation of electronic components such as MOSFETs

American Psychological Association (APA)

Salmiyah, M.& Fridja, D.& Bella Baci, A.& al-Duri, Y.. 2018. MOSFETs modeling using artificial neural network. Journal of New Technology and Materials،Vol. 8, no. 2, pp.55-58.
https://search.emarefa.net/detail/BIM-874081

Modern Language Association (MLA)

Fridja, D.…[et al.]. MOSFETs modeling using artificial neural network. Journal of New Technology and Materials Vol. 8, no. 2 (2018), pp.55-58.
https://search.emarefa.net/detail/BIM-874081

American Medical Association (AMA)

Salmiyah, M.& Fridja, D.& Bella Baci, A.& al-Duri, Y.. MOSFETs modeling using artificial neural network. Journal of New Technology and Materials. 2018. Vol. 8, no. 2, pp.55-58.
https://search.emarefa.net/detail/BIM-874081

Data Type

Journal Articles

Language

English

Notes

Includes bibliographical references : p. 58

Record ID

BIM-874081