Study of AlGaN GaN MOS-HEMTs with TiO2 gate dielectric and regrown source drain

Abstract EN

In this work, we proposed a novel TiO2/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor model (MOS-HEMT) with 60 nm gate-length and high-k TiO2 gate dielectric.

The DC and RF characteristics of the proposed AlGaN/GaN MOS-HEMT structure were obtained using the TCAD Silvaco Software.

It showsa maximum extrinsic transconductance of 198.3 mS/mm, a saturated drain-current density at VGS = 4 V of 668.4 mA/mm, with a maximum of 677.9 mA/mm, a unity-gain cut-off frequency of 229.8 GHz, and an impressive maximum oscillation frequency of 627.8 GHz.

Characterized at 10 GHz, the power performance of the proposed device showsan output power of 22.3 dBm, a power gain of 13.1 dB, and a power-added efficiency of 26.5%.The obtained simulated results are very encouraging while compared to existing AlGaN/GaN MOS-HEMTs.

This is, in fact, the best TiO2/AlGaN/GaN MOS-HEMT simulated high-frequency performance reported so far, making it suitable for high-power RF circuit applications